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FP50R12KS4C PDF预览

FP50R12KS4C

更新时间: 2024-11-07 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
12页 179K
描述
EconoPIM? 3 1200 V三相PIM IGBT模块,具有第二代快速沟槽栅/场终止IGBT和NTC 温度检测

FP50R12KS4C 数据手册

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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FP50R12KS4C  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Diode Gleichrichter/ Diode Rectifier  
Periodische Rückw. Spitzensperrspannung  
repetitive peak reverse voltage  
VRRM  
1600  
40  
V
A
A
Durchlaßstrom Grenzeffektivwert  
RMS forward current per chip  
IFRMSM  
Dauergleichstrom  
TC = 80°C  
Id  
50  
DC forward current  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
IFSM  
Stoßstrom Grenzwert  
surge forward current  
Grenzlastintegral  
I2t - value  
500  
400  
A
A
A2s  
A2s  
I2t  
1250  
800  
Transistor Wechselrichter/ Transistor Inverter  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1200  
V
IC,nom.  
IC  
Tc = 80 °C  
50  
70  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms,  
TC =  
ICRM  
80 °C  
100  
360  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Wechselrichter/ Diode Inverter  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
tP = 1 ms  
50  
100  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
Grenzlastintegral  
I2t - value  
I2t  
A2s  
VR = 0V, tp = 10ms, Tvj = 125°C  
1.200  
Transistor Brems-Chopper/ Transistor Brake-Chopper  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1200  
V
TC = 80 °C  
IC,nom.  
IC  
25  
45  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
Ptot  
50  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
230  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Brems-Chopper/ Diode Brake-Chopper  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
15  
30  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
prepared by: A.Schulz  
date of publication: 2001-11-28  
revision: 2  
approved by: M.Hierholzer  
1/11  
DB-PIM-S_IGBT_V2.xls  
2001-11-28  

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