Datasheet > FP2250

FP2250

更新时间： 2024-02-28 04:50:49

品牌	Logo	应用领域
FILTRONIC		二极管
页数	文件大小	规格书
3页	204K
描述
Transistor,

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数据手册

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FP2250 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	Base Number Matches：	1

FP2250 数据手册

Preliminary Data Sheet

FP2250QFN

PACKAGED LOW NOISE, HIGH LINEARITY PHEMT

• FEATURES

♦ 29 dBm Output Power at 1-dB Compression

♦ 17 dB Power Gain at 2 GHz

♦ 1.0 dB Noise Figure at 2 GHz

♦ 42 dBm Output IP3

♦ 50% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium

Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility

Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electron-

beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source

and gate resistance. The epitaxial structure and processing have been optimized for reliable high-

power applications. The FP2250’s active areas are passivated with Si₃N₄, and the QFN package is

ideal for low-cost, high-performance applications that require a surface-mount package. Typical

applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,

and other types of wireless infrastructure systems up to 10 GHz.

• ELECTRICAL SPECIFICATIONS @ T_Ambient= 25°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

Saturated Drain-Source Current

FP2250QFN-1

I_DSS

V_DS= 2 V; V_GS= 0 V

560

706

635

770

705

850

dBm

µA

FP2250QFN-2

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

Noise Figure

Output Third-Order Intercept Point

Maximum Drain-Source Current

Transconductance

P-1dB

G-1dB

PAE

IP3

I_MAX

G_M

I_GSO

V_P

V_BDGS

V_DS= 5 V; I_DS= 50% I_DSS

V_DS= 5V; I_DS= 50% I_DSS

V_DS= 2 V; V_GS= 1 V

V_DS= 2 V; V_GS= 0 V

V_GS= -5 V

1.0

840

550

Gate-Source Leakage Current

Pinch-Off Voltage

115

-0.25

V_DS= 2 V; I_DS= 11 mA

I_GS= 11 mA

-2.0

-10

Gate-Source Breakdown

Voltage Magnitude

Gate-Drain Breakdown

Voltage Magnitude

-12

V_BDGD

I_GD= 11 mA

-10

All RF data tested at 2.0 GHz

Phone: (408) 988-1845

Fax: (408) 970-9950

http:// www.filss.com

Revised: 10/18/02

Email: sales@filss.com

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