FP1A4A

更新时间： 2024-02-15 05:08:30

品牌	Logo	应用领域
日电电子 - NEC		晶体开关小信号双极晶体管光电二极管
页数	文件大小	规格书
8页	147K
描述
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

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技术参数
数据手册

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FP1A4A 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, SC-59, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.75
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.7 A
集电极-发射极最大电压：	25 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FP1A4A 数据手册

DATA SHEET

COMPOUND TRANSISTOR

FP1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Up to 0.7 A current drive available

On-chip bias resistor

Low power consumption during drive

QUALITY GRADES

•

Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation

to know the specification of quality grade on the devices and its

recommended applications.

FP1 SERIES LISTS

Products

FP1A4A

FP1L2Q

FP1A3M

FP1F3P

FP1J3P

FP1L3N

FP1A4M

Marking

S30

R¹(KΩ)

−

R²(KΩ)

S31

0.47

1.0

4.7

1.0

S32

S33

2.2

S36

3.3

S34

4.7

S35

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T

Ratings

−25

Unit

−25

−10

−0.7

−1.0

−20

°C

Total power dissipation

Junction temperature

200

T^j

150

Storage temperature

T^stg

−55 to +150

* PW ≤ 10 ms, duty cycle ≤ 50 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16181EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6 7 8

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与FP1A4A相关器件

型号	品牌	描述	获取价格	数据表
FP1A4A-A	RENESAS	700mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR	获取价格
FP1A4A-A	NEC	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
FP1A4A-L	RENESAS	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC	获取价格
FP1A4A-T1B	RENESAS	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC	获取价格
FP1A4A-T2B	RENESAS	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC	获取价格
FP1A4A-T2B-AT	RENESAS	PRE-BIASED "DIGITAL" TRANSISTOR,25V V(BR)CEO,700MA I(C),SOT-346	获取价格