Datasheet > BAV70

BAV70

更新时间： 2024-01-18 11:52:23

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管开关
页数	文件大小	规格书
2页	104K
描述
Dual Series Switching Diode - Silicon epitaxial planar type

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技术参数
数据手册

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BAV70 技术参数

生命周期：	Active	零件包装代码：	SC-70
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAV70 数据手册

Dual Series Switching Diode

Formosa MS

BAL99

BAW56

BAV70

SOT-23

BAV99

Silicon epitaxial planar type

Features

(B)

(A)

(C)

Small surface mounting type

0.055 (1.40)

0.047 (1.20)

0.028 (0.70)

0.020 (0.50)

High reliability

0.102 (2.60)

0.094 (2.40)

High speed ( t_rr< 1.5 ns )

R 0.05

(0.002)

0.045 (1.15)

0.033 (0.85)

Mechanical data

Case : SOT-23

Dimensions in inches and (millimeters)

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Mounting Position : Any

SINGLE(Alt)

COMMON ANODE COMMON CATHODE

SERIES

BAL99

BAW56

BAV70

BAV99

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

Repetitive peak reverse voltage

Reverse voltage

CONDITIONS

Symbol

V_RRM

V_R

MIN.

TYP.

MAX.

UNIT

Peak forward surge current

Repetitive peak forward current

Forward current

t_p= 1 us

I_FSM

I_FRM

I_F

2.0

450

215

715

225

175

+150

Average forward current

Power dissipation

V_R= 0

I_FAV

P_D

Junction temperature

Storage temperature

T_j

T_STG

-55

ELECTRICAL CHARACTERISTICS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

V_F

MIN.

TYP.

MAX.

0.855

1.250

2.5

UNIT

I_F= 10mA

I_F= 150mA

V_R= 70V

Forward voltage

V_F

I_R

V_R= 20V , T_j= 150 C

Reverse current

I_R

V_R= 70V , T_j= 150 C

I_R

Breakdown current

Diode capacitance

Reverse recovery time

I_R= 100uA , T_P/T = 0.01 T_P= 0.3ms

V_R= 0 , f = 1MHz , V_HF= 50mV

V_(BR)

C_D

1.5

I_F=10mA, V_R= 10mA, I_RR= 0.1 X I_R, R_L=100_OHM

t_rr

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