Datasheet > FOD819SD

FOD819SD

更新时间： 2024-11-16 02:50:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	269K
描述
FOD819 4-Pin DIP High Speed Phototransistor Optocouplers

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中文翻译

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数据手册

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FOD819SD 数据手册

FOD819 Series

FOD819 4-Pin DIP High

Speed Phototransistor

Optocouplers

Description

www.onsemi.com

The FOD819 consists of a gallium arsenide (GaAs) infra− red

emitting diode, driving a high speed photo detector with integrated

base−to−emitter resistor, R , in a 4−pin dual−in−line package. It is

designed to be an improved replacement to the popular FOD817

Series when higher speed performance is required in isolated data

signal transmission.

Features

• High Speed Performance ~ 30 kHz

DIP 4 PINS

• Current Transfer Ratio: 100% to 600%

• Minimum BV

of 80 V Guaranteed

CEO

• Safety and Regulatory Approvals:

for 1 Minute

MARKING DIAGRAM

• UL1577, 5,000 VAC

RMS

• DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Typical Applications

• Digital Logic Inputs

• Microprocessor Inputs

• Power Supply Monitor

• Twisted Pair Line Receiver

• Telephone Line Receiver

1. ON

2. 819

3. V

= Company Logo

= Device Number

= DIN EN/IEC60747−5−5 Option

= One−Digit Year Code

= Digit Work Week

5. ZZ

6. Y

= Assembly Package Code

PIN CONNECTIONS

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Publication Order Number:

July, 2018 − Rev. 2

FOD819/D

12 3 4 5 6 7...11

中文翻译

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