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FOD817D PDF预览

FOD817D

更新时间: 2024-11-17 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管输出元件PC
页数 文件大小 规格书
9页 164K
描述
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

FOD817D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:LEAD FREE, DIP-4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:3.45
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:439049Samacsys Pin Count:4
Samacsys Part Category:PhototransistorSamacsys Package Category:Dual-In-Line Packages
Samacsys Footprint Name:pdip 4 4.6*6.5Samacsys Released Date:2019-10-28 11:34:24
Is Samacsys:N其他特性:UL APPROVED
Coll-Emtr Bkdn Voltage-Min:70 V配置:SINGLE
当前传输比率-最小值:300%标称电流传输比:300%
最大暗电源:100 nA最大正向电流:0.05 A
最大正向电压:1.4 V最大绝缘电压:5000 V
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.05 A
最高工作温度:110 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.15 W
最长响应时间:0.000018 s子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

FOD817D 数据手册

 浏览型号FOD817D的Datasheet PDF文件第2页浏览型号FOD817D的Datasheet PDF文件第3页浏览型号FOD817D的Datasheet PDF文件第4页浏览型号FOD817D的Datasheet PDF文件第5页浏览型号FOD817D的Datasheet PDF文件第6页浏览型号FOD817D的Datasheet PDF文件第7页 
4-PINPHOTOTRANSISTOR  
OPTOCOUPLERS  
FOD817 Series  
DESCRIPTION  
The FOD817 Series consists of a gallium arsenide infrared  
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.  
4
FEATURES  
Applicable to Pb-free IR reflow soldering  
Compact 4-pin package  
Current transfer ratio in selected groups:  
1
FOD817:  
50-600%  
80-160%  
130-260%  
200-400%  
300-600%  
FOD817A:  
FOD817B:  
FOD817C:  
FOD817D:  
FUNCTIONAL BLOCK DIAGRAM  
C-UL, UL and VDE approved  
High input-output isolation voltage of 5000 Vrms  
1
2
4
COLLECTOR  
ANODE  
APPLICATIONS  
CATHODE  
3 EMITTER  
FOD817 Series  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless otherwise specified.)  
A
Parameter  
Symbol  
Value  
Units  
TOTAL DEVICE  
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
T
-55 to +125  
-30 to +100  
260 for 10 sec  
200  
°C  
°C  
STG  
T
OPR  
T
°C  
SOL  
Total Device Power Dissipation  
EMITTER  
P
mW  
D
Continuous Forward Current  
Reverse Voltage  
I
50  
6
mA  
V
F
V
R
70  
mW  
LED Power Dissipation  
Derate above 25°C  
P
D
0.93  
mW/°C  
DETECTOR  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Continuous Collector Current  
V
V
70  
6
V
V
CEO  
ECO  
I
50  
mA  
C
150  
2.0  
mW  
mW/°C  
Detector Power Dissipation  
Derate above 25°C  
P
D
© 2004 Fairchild Semiconductor Corporation  
Page 1 of 9  
8/19/04  

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