Datasheet > FMY29N60S1FDA

FMY29N60S1FDA

更新时间： 2024-04-09 18:59:02

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	355K
描述
TO-247

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FMY29N60S1FDA 数据手册

http://www.fujielectric.com/products/semiconductor/

FMY29N60S1FDA Automotive

FUJI POWER MOSFET

Super J MOS^®S1 series FRED type

N-Channel enhancement mode power MOSFET

Features

Outline Drawings [mm]

Equivalent circuit schematic

Low on-state resistance

Low switching loss

Easy to use

Drain (D)

(more controllable switching dV/dt by Rg)

Reliability assurance in accordance with AEC Q101

100% avalanche tested

Built in fast recovery diode

Gate (G)

Applications

Source (S)

Automotive switching applications

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Description

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

VGS=-30V

±29

Tc=25°C Note*1

Tc=100°C Note*1

Continuous Drain Current

±18

Pulsed Drain Current

±87

Gate-Source Voltage

±30

Non-Repetitive Maximum Avalanche current

Non-Repetitive Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Note *2

Note *3

340

kV/μs

A/μs

dV^DS/dt

dV/dt

-di/dt

VDS=600V

Note *4

Note *5

Peak Diode Recovery di/dt

100

2.5

=25°C

Maximum Power Dissipation

220

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting Tch=25°C, I^AS=10A, L=6.2mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

EAS limited by maximum channel temperature and avalanche current.

Note *4 : I^F≤-29A, -di/dt=100A/μs, VDD≤300V, Tch≤150°C

Note *5 : I^F≤-29A, dV/dt=40kV/μs, VDD≤300V, Tch≤150°C

DECEMBER 2015

12 3 4 5 6 7 8

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