Datasheet > FMY24N60ES

FMY24N60ES

更新时间： 2024-03-03 10:10:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	504K
描述
TO-247

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FMY24N60ES 数据手册

http://www.fujielectric.co.jp/products/semiconductor/index.html

FMY24N60ES

FUJI POWER MOSFET

Automotive

Super FAP-E^3SLow Qg series

N-Channel enhancement mode power MOSFET

■Features

■Outline Drawings

■Equivalent circuit schematic

Low on-state resistance

Low switching loss

easy to use

Drain (D)

(more controllable switching dV/dt by Rg)

The reliability trial conforms to AEC Q101.

100% avalanche tested

Gate (G)

■Applications

Source (S)

Automotive switching applications

■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)

Description

Symbol

V_DS

V_DSX

I_D

Characteristics

Unit

Remarks

V_GS=-30V

600

Drain-Source Voltage

Continuous Drain Current

±24

±96

±30

Pulsed Drain Current

I_DP

Gate-Source Voltage

V_GS

I_AS

Non-Repetitive Maximum Avalanche current

Non-Repetitive Maximum Avalanche Energy

Peak Diode Recovery dV/dt

Peak Diode Recovery di/dt

Note*1

Note*2

Note*3

Note*4

E_AS

430

kV/μs

A/μs

dV/dt

-di/dt

P_D

4.7

100

Maximum Power Dissipation

400

T_ch

150

℃

Operating and Storage Temperature range

T_stg

-55 to +150

℃

Note*1 : Tch≦150℃,See Fig.1 and Fig.2

Note*2 : Starting Tch=25℃,L=1370μH,V_CC=60V,RG=50Ω,See Fig.1 and Fig.2

E_ASlimited by maximum channel temperature and avalanche current.

See to Avalanche Energy graph of page 5

Note*3 : IF≦-ID,-di/dt=100A/μs,V_CC≦BV_DSS, Tch≦150℃

Note*4 : IF≦-ID,dV/dt=4.7kV/μs,V_CC≦BV_DSS, Tch≦150℃

■Electrical Characteristics at Tc=25℃(unless otherwise specified)

Static Ratings

Description

Symbol

BV_DSS

Conditions

Min.

Typ.

Max.

Unit

I_D=1mA

V_GS=0V

600

3.7

－

Drain-Source Breakdown Voltage

I_D=1mA

BV_DSX

－

4.2

0.7

－

V_GS=-30V

I_D=250μA

Gate Threshold Voltage

V_GS(th)

4.7

V_DS= V_GS

V_DS= 600V

V_GS=0V

Ta=25℃

Zero Gate Voltage Drain current

I_DSS

μA

V_DS= 480V

V_GS=0V

Ta=125℃

－

250

100

280

V_GS=30V

V_DS= 0V

Gate-Source Leakage current

I_GSS

－

I_D=12A

Drain-Source On-State Resistance

R_DS(on)

－

240

mΩ

V_GS=10V

Jun. 2013

12 3 4 5 6 7 8

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