Datasheet > FMW57N60S1HF

FMW57N60S1HF

更新时间： 2024-04-09 18:59:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1140K
描述
TO-247-P2

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数据手册

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FMW57N60S1HF 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMW57N60S1HF

Super SJ MOS series

Features

N-Channel enhancement mode power MOSFET

Equivalent circuit schematic

Pb-free lead terminal

RoHS compliant

②Drain

Applications

For switching

①

Gate

①

②

③Source

③

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

±57

±36

±171

±30

Drain-Source Voltage

DSX

VGS=-30V

Tc=25°C Note*1

Tc=100°C Note*1

Note *1

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive

Maximum Avalanche Current

11.1

Note *2

Note *3

Non-Repetitive

Maximum Avalanche Energy

2109.8

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

dV^DS/dt

dV/dt

-di/dt

kV/ns

A/μs

VDS≤ 600V

Note *4

Note *5

2.5

=25°C

Maximum Power Dissipation

445

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=6.7A, L=86.2mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^F≤-28.5A, -di/dt=50A/μs, VDS peak≤ 600V, Tch≤150°C.

Note *5 : I^F≤-28.5A, dV/dt=15kV/μs, VDS peak≤ 600V, Tch≤150°C.

8476

APRIL 2016

12 3 4 5 6 7 8

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