Datasheet > FMW3

FMW3

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	82K
描述
Dual NPN Transistor

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中文翻译

获取价格

数据手册

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FMW3 数据手册

SMD Type

TransistIoCrs

General purpose (Dual NPN Transistors)

FMW3

■Features

Unit: mm

● High breakdown voltage

● Power dissipation: PC=300mW

● Collector Curren: IC=50mA

FMW3

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

120

5.0

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation(TOTAL)

Junction Temperature

℃

300

150

Storage Temperature

Tstg

-55 to 150

℃

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

120

5.0

Typ Max

Unit

I_E=0

Ic= 50μA,

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

V(BR)CBO

V(BR)CEO

V(BR)EBO

IcBO

Ic= 1 mA， IB=0

IE= 50 μA， IC=0

VCB= 100 V , IE=0

VCE= 4.0V , IC=0

VCE= 60V, IC= 2.0mA

0.5

μA

Collector cutoff current

IEBO

DC current gain

hFE

180

820

Collector-emitter saturation voltage

Transition frequency

VCE(sat) IC=10 mA, IB= 1.0mA

fT VCE= 12V, IC= 2mA,f=100MHz

0.5

140

MHz

■ Marking

Marking

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中文翻译

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