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FMR17N60ES

更新时间： 2024-02-28 20:22:40
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
5页 568K
描述
N-CHANNEL SILICON POWER MOSFET

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FMR17N60ES 数据手册

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FMR17N60ES  
FUJI POWER MOSFET  
3S  
N-CHANNEL SILICON POWER MOSFET  
Super FAP-E series  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Maintains both low power loss and low noise  
Lower RDS(on) characteristic  
TO-3PF  
More controllable switching dv/dt by gate resistance  
Smaller VGS ringing waveform during switching  
Narrow band of the gate threshold voltage (4.2±0.5V)  
High avalanche durability  
Drain(D)  
Gate(G)  
Applications  
Source(S)  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
VDS  
600  
600  
Drain-Source Voltage  
VDSX  
V
VGS = -30V  
Continuous Drain Current  
I
I
D
±17  
A
Pulsed Drain Current  
DP  
±68  
A
Gate-Source Voltage  
VGS  
±30  
V
Repetitive and Non-Repetitive Maximum AvalancheCurrent  
Non-Repetitive Maximum Avalanche Energy  
Repetitive Maximum Avalanche Energy  
Peak Diode Recovery dV/dt  
I
AR  
17  
A
Note*1  
Note*2  
Note*3  
Note*4  
E
E
AS  
AR  
765.5  
13.5  
4.2  
mJ  
mJ  
kV/µs  
A/µs  
dV/dt  
-di/dt  
Peak Diode Recovery -di/dt  
100  
Note*5  
3.13  
135  
Ta=25°C  
Tc=25°C  
Maximum Power Dissipation  
P
D
W
T
ch  
stg  
ISO  
150  
°C  
°C  
Operating and Storage Temperature range  
Isolation Voltage  
T
-55 to + 150  
2
V
kVrms  
t = 60sec, f = 60Hz  
Electrical Characteristics at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
-
max.  
Unit  
V
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
I
I
D
=250µA, VGS=0V  
=250µA, VDS=VGS  
DS=600V, VGS=0V  
DS=480V, VGS=0V  
GS=±30V, VDS=0V  
600  
-
4.7  
25  
VGS (th)  
D
3.7  
4.2  
-
V
V
V
V
T
ch=25°C  
-
Zero Gate Voltage Drain Current  
I
DSS  
µA  
Tch=125°C  
-
-
250  
100  
0.40  
-
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
GSS  
-
10  
nA  
Ω
R
DS (on)  
I
I
D
=8.5A, VGS=10V  
=8.5A, VDS=25V  
-
0.34  
11  
g
fs  
D
5.5  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
2500  
280  
16  
3750  
420  
24  
V
V
DS=25V  
GS=0V  
Output Capacitance  
pF  
ns  
f=1MHz  
Reverse Transfer Capacitance  
-
-
46  
41  
69  
V
V
cc=300V  
GS=10V  
Turn-On Time  
Turn-Off Time  
-
61.5  
165  
30  
I
R
D
=8.5A  
=15Ω  
td(off)  
tf  
-
110  
20  
G
-
Total Gate Charge  
Q
Q
Q
Q
G
-
68  
23  
114  
34.5  
36  
V
cc=300V  
=17A  
Gate-Source Charge  
GS  
GD  
SW  
-
I
D
nC  
Gate-Drain Charge  
-
24  
VGS=10V  
Gate-Drain Crossover Charge  
Avalanche Capability  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
-
10  
15  
I
AV  
L=2.00mH, Tch=25°C  
17  
-
-
-
A
V
VSD  
I
F
=17A, VGS=0V, Tch=25°C  
0.90  
0.75  
10  
1.35  
-
trr  
-
µS  
µC  
I
F
=17A, VGS=0V  
-di/dt=100A/µs, Tch=25°C  
Qrr  
-
-
Thermal Characteristics  
Description  
Symbol  
Test Conditions  
Channel to case  
min.  
typ.  
max.  
0.930  
40.0  
Unit  
°C/W  
°C/W  
Rth (ch-c)  
Rth (ch-a)  
Thermal resistance  
Channel to ambient  
Note *1 : Tch≤150°C  
Note *2 : Stating Tch=25°C, IAS=7A, L=28.6mH, Vcc=60V, RG=50Ω  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
See to the 'Transient Themal impeadance' graph.  
E
AS limited by maximum channel temperature and avalanche current.  
Note *4 : I  
Note *5 : I  
F
≤-I  
≤-I  
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.  
, dv/dt=4.2kV/µs, Vcc≤BVDSS, Tch≤150°C.  
See to 'Avalanche Energy' graph.  
F
D
1
12345

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