Datasheet > FMP07N60S1

FMP07N60S1

更新时间： 2024-03-03 10:09:27

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1492K
描述
TO-220

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FMP07N60S1 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMP07N60S1

Super J MOS^®S1 series

Features

N-Channel enhancement mode power MOSFET

Outline Drawings [mm]

Equivalent circuit schematic

10⁺₀^0.5

Pb-free lead terminal

RoHS compliant

4.5±0.2

TO-220

1.3±0.2

②Drain

Applications

For switching

1.2 ±0.2

PRE-SOLDER

①

Gate

+0.2

-0.1

0.8

0.4 ^+0.2

①

②

③

2.54±0.2

2.54± 0.2

2.7±0.2

③Source

CONNECTION

GATE

JEDEC : TO-220AB

DRAIN

SOURCE

DIMENSIONS ARE IN

MILLIMETERS.

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Description

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

VGS=-30V

±6.5

±4.1

±19.5

±30

Tc=25°C Note*1

Tc=100°C Note*1

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive

Maximum Avalanche Current

2.3

Note *2

Note *3

Non-Repetitive

Maximum Avalanche Energy

203.4

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

dV^DS/dt

dV/dt

-di/dt

kV/μs

A/μs

VDS≤ 600V

Note *4

Note *5

100

2.02

=25°C

Maximum Power Dissipation

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=1.4A, L=190mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^F≤-ID, -di/dt=100A/μs, VDD≤400V, Vpeak≤BVDSS, Tch≤150°C.

Note *5 : I^F≤-ID, dV/dt=15kV/μs, VDD≤400V, Vpeak≤BVDSS, Tch≤150°C.

Electrical Characteristics at T =25°C (unless otherwise speciﬁed)

• Static Ratings

Description

Symbol

Conditions

min.

typ.

max.

Unit

=250μA

GS=0V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV^DSS

600

3.0

=250μA

DS=VGS

GS(th)

2.5

3.5

DS=600V

GS=0V

ch=25°C

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

DSS

μA

DS=480V

GS=0V

Tch=125°C

250

100

GS= ± 30V

DS=0V

IGSS

=3.25A

GS=10V

Drain-Source On-State Resistance

Gate resistance

DS(on)

0.49

3.4

0.58

f=1MHz, open drain

08171b

OCTOBER 2015

12 3 4 5 6 7 8

下载PDF

与FMP07N60S1相关器件

型号	品牌	描述	获取价格	数据表
FMP07N90E	FUJI	TO-220AB	获取价格
FMP08N50E	FUJI	N-CHANNEL SILICON POWER MOSFET	获取价格
FMP08N60S1	FUJI	TO-220	获取价格
FMP08N80E	FUJI	TO-220AB	获取价格
FMP09N90E	FUJI	TO-220AB	获取价格
FMP1	ROHM	Switching diode	获取价格