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FMMV3102 PDF预览

FMMV3102

更新时间: 2024-11-04 22:40:55
品牌 Logo 应用领域
捷特科 - ZETEX 二极管变容二极管光电二极管局域网
页数 文件大小 规格书
1页 39K
描述
SILICON PLANAR VARIABLE CAPACITANCE DIODE

FMMV3102 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.16Is Samacsys:N
其他特性:LOW NOISE最小击穿电压:30 V
配置:SINGLE二极管电容容差:11.11%
最小二极管电容比:4.5标称二极管电容:22.5 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.33 W认证状态:Not Qualified
最小质量因数:200最大重复峰值反向电压:30 V
子类别:Varactors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

FMMV3102 数据手册

  
SOT23 SILICON PLANAR  
VARIABLE CAPACITANCE DIODE  
ISSUE 3 – JANUARY 1998  
FMMV3102  
PIN CONFIGURATION  
2
1
1
PARTMARKING DETAIL  
FMMV3102 – 4C  
3
3
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Reverse Breakdown  
Voltage  
VBR  
30  
V
IR = 10µA  
Reverse current  
IR  
10  
VR = 25V  
nA  
nH  
Series Inductance  
LS  
TCC  
3.0  
f=250MHz  
Diode Capacitance  
Temperature  
Coefficient  
280  
ppm/ °C VR = 3V, f=1MHz  
Case Capacitance  
CC  
0.1  
pF  
f=1MHz  
TUNING CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Diode Capacitance  
Capacitance Ratio  
Figure of MERIT  
Cd  
20  
25 pF  
VR = 3V, f=1MHz  
VR = 3V/25V, f=1MHz  
C
d / Cd  
4.5  
Q
200  
300  
VR = 3V, f=50MHz  
Spice parameter data is available upon request for this device  

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