FMMTA64

更新时间： 2024-11-14 22:48:59

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管达林顿晶体管局域网
页数	文件大小	规格书
1页	40K
描述
PNP SILICON PLANAR DARLINGTON TRANSISTOR

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中文翻译

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数据手册

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FMMTA64 数据手册

SOT23 PNP SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – MARCH 2001

FMMTA64

✪

PARTMARKING DETAIL –

FMMTA64 - Z2V

COMPLEMENTARY TYPES – FMMTA64 - FMMTA14

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_CM

-30

-10

Peak Pulse Current

-800

°C

Continuous Collector Current

Peak Base Current

I_C

-500

I_BM

-200

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

330

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL

FMMTA64

UNIT

CONDITIONS.

MIN.

MAX.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-30

-10

I_C=-10µA, I_E=0

Collector-Emitter Breakdown

Voltage

I_C=-10mA, I_B=0*

Emitter-Base Breakdown

Voltage

I_E=-10µA, I_C=0

Collector Cut-Off

Current

-0.1

V_CB=-30V, I_E=0

µA

Emitter Cut-Off Current

I_EBO

h_FE

V_CE=-10V

Static Forward Current

Transfer Ratio

10K

20K

I_C=-10mA, V_CE=5V*

I_C=-100mA, V_CE=5V*

Collector-Emitter Saturation

Voltage

V_CE(sat)

V_BE(sat)

f_T

-1.5

-2.0

I_C=-100mA, I_B=-0.1mA*

Base-Emitter

Saturation Voltage

I_C=-100mA, I_B=-0.1mA*

Transition

Frequency

125

MHz

I_C=-50mA, V_CE=-5V

f=20MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FZTA64 datasheet.

TBA

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