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FMMTA56R PDF预览

FMMTA56R

更新时间: 2024-02-24 14:36:57
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 52K
描述
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FMMTA56R 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOT-23, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.45Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

FMMTA56R 数据手册

  
SOT23 PNP SILICON PLANAR  
FMMTA55  
FMMTA56  
MEDIUM POWER TRANSISTORS  
FEATURES  
ISSUE 3 – JANUARY 1996  
E
*
Gain of 50 at IC=100mA  
C
PARTMARKING DETAIL -  
FMMTA55 - 2H  
FMMTA56 - 2G  
FMMTA55R - NB  
FMMTA56R - MB  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMTA55 FMMTA56  
UNIT  
V
Collector-Base Voltage  
-60  
-60  
-80  
-80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-4  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
-500  
330  
mA  
mW  
°C  
Ptot  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
FMMTA55  
FMMTA56  
PARAMETER  
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICES  
-60  
-4  
-80  
-4  
V
IC=-1mA, IB=0*  
Emitter-Base  
Breakdown Voltage  
V
IE=-100µA, IC=0  
Collector-Emitter  
Cut-Off Current  
-0.1  
-0.1  
-0.1  
-0.1  
VCE=-60V  
µA  
µA  
Collector-Base  
Cut-Off Current  
ICBO  
VCB=-80V, IE=0  
VCB=-60V, IE=0  
Static Forward  
Current Transfer Ratio  
hFE  
50  
50  
50  
50  
IC=-10mA, VCE=1V*  
IC=-100mA, VCE=1V*  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(on)  
fT  
-0.25  
-1.2  
-0.25  
-1.2  
V
V
IC=-100mA,  
IB=-10mA*  
Base-Emitter  
Turn-On Voltage  
IC=-100mA, VCE=-1V*  
Transition  
Frequency  
100  
100  
MHz IC=-10mA, VCE=-2V  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 177  

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