Datasheet > FMMTA56-2G

FMMTA56-2G

更新时间： 2024-11-14 22:48:59

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
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1页	52K
描述
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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FMMTA56-2G 数据手册

SOT23 PNP SILICON PLANAR

FMMTA55

FMMTA56

MEDIUM POWER TRANSISTORS

✪

FEATURES

ISSUE 3 JANUARY 1996

Gain of 50 at I_C=100mA

PARTMARKING DETAIL -

FMMTA55 - 2H

FMMTA56 - 2G

FMMTA55R - NB

FMMTA56R - MB

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMTA55 FMMTA56

UNIT

Collector-Base Voltage

-60

-80

Collector-Emitter Voltage

Emitter-Base Voltage

-4

Continuous Collector Current

Power Dissipation at T_amb=25°C

-500

330

°C

P_tot

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

FMMTA55

FMMTA56

PARAMETER

SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CES

-60

-4

-80

-4

I_C=-1mA, I_B=0*

Emitter-Base

Breakdown Voltage

I_E=-100µA, I_C=0

Collector-Emitter

Cut-Off Current

-0.1

V_CE=-60V

µA

Collector-Base

Cut-Off Current

I_CBO

V_CB=-80V, I_E=0

V_CB=-60V, I_E=0

Static Forward

Current Transfer Ratio

h_FE

I_C=-10mA, V_CE=1V*

I_C=-100mA, V_CE=1V*

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(on)

f_T

-0.25

-1.2

-0.25

-1.2

I_C=-100mA,

I_B=-10mA*

Base-Emitter

Turn-On Voltage

I_C=-100mA, V_CE=-1V*

Transition

Frequency

100

MHz I_C=-10mA, V_CE=-2V

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3 - 177

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