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FMMTA20R PDF预览

FMMTA20R

更新时间: 2024-09-28 22:48:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 30K
描述
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

FMMTA20R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.49Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

FMMTA20R 数据手册

  
SOT23 NPN SILICON PLANAR  
FMMTA20  
SMALL SIGNAL TRANSISTOR  
ISSUE 2 – MARCH 1995  
PARTMARKING DETAIL –  
FMMTA20 – 1C  
FMMTA20R – 3C  
E
C
COMPLEMENTARY TYPE – FMMTA70  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Emitter Voltage  
40  
4
Emitter-Base Voltage  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
100  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=1mA, IE=0  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)EBO  
ICBO  
40  
4
Emitter-Base  
Breakdown Voltage  
V
IE=100mA, IC=0  
Collector Cut-Off  
Current  
0.1  
VCB=30V, IE=0  
µA  
Static Forward  
Current Transfer Ratio  
hFE  
40  
400  
0.25  
IC=5mA, VCE=10V*  
IC=10mA,IB=1mA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
Transition  
Frequency  
fT  
125  
MHz  
IC=5mA, VCE=10V  
f=100MHz  
Output Capacitance  
Cobo  
4
pF  
VCB=10V, f=140kHz, IE=0  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  

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