Datasheet > FMMTA20-1C

FMMTA20-1C

更新时间： 2024-11-14 22:48:59

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
1页	30K
描述
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

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FMMTA20-1C 数据手册

SOT23 NPN SILICON PLANAR

FMMTA20

SMALL SIGNAL TRANSISTOR

ISSUE 2 MARCH 1995

PARTMARKING DETAIL

FMMTA20 1C

FMMTA20R 3C

COMPLEMENTARY TYPE FMMTA70

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

100

°C

P_tot

330

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

I_C=1mA, I_E=0

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)EBO

I_CBO

Emitter-Base

Breakdown Voltage

I_E=100mA, I_C=0

Collector Cut-Off

Current

0.1

V_CB=30V, I_E=0

µA

Static Forward

Current Transfer Ratio

h_FE

400

0.25

I_C=5mA, V_CE=10V*

I_C=10mA,I_B=1mA

Collector-Emitter

Saturation Voltage

V_CE(sat)

Transition

Frequency

f_T

125

MHz

I_C=5mA, V_CE=10V

f=100MHz

Output Capacitance

C_obo

V_CB=10V, f=140kHz, I_E=0

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

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