5秒后页面跳转
FMMTA06 PDF预览

FMMTA06

更新时间: 2024-09-28 22:48:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管光电二极管局域网
页数 文件大小 规格书
1页 39K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FMMTA06 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
参考标准:CECC50002-240子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.25 V
Base Number Matches:1

FMMTA06 数据手册

  
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
FMMTA06  
ISSUE 5 – MARCH 2001  
FEATURES  
*
*
80 Volt VCEO  
Gain of 50 at IC=100mA  
E
C
PARTMARKING DETAIL –  
FMMTA06 – 1G  
B
FMMTA06R – MA  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
80  
V
Emitter-Base Voltage  
4
500  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
CONDITIONS.  
MIN.  
80  
MAX.  
Collector-Emitter  
V(BR)CEO  
V(BR)EBO  
ICES  
V
IC=1mA*  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
4
V
IE=100µA  
Collector Cut-Off  
Current  
0.1  
0.1  
VCES=60V  
µA  
µA  
Collector Cut-Off  
Current  
ICBO  
VCB=80V  
Static Forward Current  
Transfer Ratio  
hFE  
50  
50  
IC=10mA, VCE=1V*  
IC=100mA, VCE=1V*  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(on)  
fT  
0.25  
1.2  
V
IC=100mA, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
V
IC=100mA, VCE=1V*  
Transition  
Frequency  
100  
MHz  
IC=10mA, VCE=2V  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
TBA  

与FMMTA06相关器件

型号 品牌 获取价格 描述 数据表
FMMTA06-1G ZETEX

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA06R ZETEX

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA06R-MA ZETEX

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA06RTA DIODES

获取价格

暂无描述
FMMTA06RTC DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
FMMTA06TA DIODES

获取价格

SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS
FMMTA06TA ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMTA06TC ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMTA12 DIODES

获取价格

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS
FMMTA12 ZETEX

获取价格

NPN SILICON PLANAR DARLINGTON TRANSISTORS