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FMMT734 PDF预览

FMMT734

更新时间: 2024-02-14 13:28:08
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
3页 78K
描述
PNP SILICON POWER DARLINGTON TRANSISTOR

FMMT734 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.39最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):15000JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON

FMMT734 数据手册

 浏览型号FMMT734的Datasheet PDF文件第2页浏览型号FMMT734的Datasheet PDF文件第3页 
“SUPER SOT” SOT23 PNP SILICON  
POWER DARLINGTON TRANSISTOR  
ISSUE 1 – AUGUST 1997  
FMMT734  
FEATURES  
*
*
*
625mW POWER DISSIPATION  
Very High hFE at High Current (5A)  
Extremely Low VCE(sat) at High Current (1A)  
E
C
COMPLEMENTARY TYPE – FMMT634  
PARTMARKING DETAIL – 734  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-100  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-100  
V
-12  
V
Peak Pulse Current  
-5  
A
Continuous Collector Current  
Power Dissipation  
IC  
-800  
mA  
mW  
°C  
Ptot  
625  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic  
substrate measuring 15x15x0.6mm  
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  

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