JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT619
TRANSISTOR (NPN)
SOT-23
FEATURE
3
Low Saturation Voltage
1. BASE
MARKING:619
1
2. EMITTER
3. COLLECTOR
2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
V
Collector Current -Continuous
Power Dissipation
2
A
PC
0.35
357
W
RθJA
PCM
Thermal Resistance from Junction to Ambient
℃/W
W
(note 1)
Maximum Power Dissipation
0.625
200
RθJA
TJ,Tstg
Thermal Resistance from Junction to Ambient (note 1)
℃/W
℃
Operation Junction and Storage Temperature Range
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Min
50
50
5
Typ
Max
Unit
V
IC=100μA,IE=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage (note 2)
Emitter-base breakdown voltage
Collector cut-off current
IC=10mA,IB=0
V
IE=100μA ,IC=0
VCB=40V,IE=0
V
100
100
nA
nA
VEB=4V,IC=0
Emitter cut-off current
IEBO
VCE=2V, IC=10mA
VCE=2V, IC=0.2A
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=2V, IC=6A
IC=0.1A,IB=10mA
IC=1A,IB=10mA
IC=2A,IB=100mA
IC=2A,IB=50mA
IC=2A, VCE=2V
VCB=10V, f=1MHz
hFE(1)
200
300
200
100
hFE(2)
DC current gain (note 2)
hFE(3)
hFE(4)
hFE(5)
40
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
VBE(on)
Cob
20
200
220
1
mV
mV
mV
V
Collector-emitter saturation voltage (note 2)
Base-emitter saturation voltage (note 2)
Base-emitter on voltage (note 2)
Output capacitance
Turn-on time
1
V
20
pF
ns
t(on)
170
750
VCC=10V, IC=1A, IB1=-IB2=10mA
VCE=10V,IC=50mA, f=100MHz
Turn-off time
t(off)
ns
Transition frequency
Notes :
fT
100
MHz
1.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.
2. Pulse test: Pulse width≤300μs,duty cycle≤2.0%.
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1
Rev. - 2.0