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FMMT619 PDF预览

FMMT619

更新时间: 2024-11-22 14:55:51
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 620K
描述
SOT-23

FMMT619 数据手册

 浏览型号FMMT619的Datasheet PDF文件第2页浏览型号FMMT619的Datasheet PDF文件第3页浏览型号FMMT619的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
FMMT619  
TRANSISTOR (NPN)  
SOT-23  
FEATURE  
3
Low Saturation Voltage  
1. BASE  
MARKING:619  
1
2. EMITTER  
3. COLLECTOR  
2
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
50  
V
Emitter-Base Voltage  
5
V
Collector Current -Continuous  
Power Dissipation  
2
A
PC  
0.35  
357  
W
RθJA  
PCM  
Thermal Resistance from Junction to Ambient  
/W  
W
(note 1)  
Maximum Power Dissipation  
0.625  
200  
RθJA  
TJ,Tstg  
Thermal Resistance from Junction to Ambient (note 1)  
/W  
Operation Junction and Storage Temperature Range  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Min  
50  
50  
5
Typ  
Max  
Unit  
V
IC=100μA,IE=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage (note 2)  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=10mA,IB=0  
V
IE=100μA ,IC=0  
VCB=40V,IE=0  
V
100  
100  
nA  
nA  
VEB=4V,IC=0  
Emitter cut-off current  
IEBO  
VCE=2V, IC=10mA  
VCE=2V, IC=0.2A  
VCE=2V, IC=1A  
VCE=2V, IC=2A  
VCE=2V, IC=6A  
IC=0.1A,IB=10mA  
IC=1A,IB=10mA  
IC=2A,IB=100mA  
IC=2A,IB=50mA  
IC=2A, VCE=2V  
VCB=10V, f=1MHz  
hFE(1)  
200  
300  
200  
100  
hFE(2)  
DC current gain (note 2)  
hFE(3)  
hFE(4)  
hFE(5)  
40  
VCE(sat)1  
VCE(sat)2  
VCE(sat)3  
VBE(sat)  
VBE(on)  
Cob  
20  
200  
220  
1
mV  
mV  
mV  
V
Collector-emitter saturation voltage (note 2)  
Base-emitter saturation voltage (note 2)  
Base-emitter on voltage (note 2)  
Output capacitance  
Turn-on time  
1
V
20  
pF  
ns  
t(on)  
170  
750  
VCC=10V, IC=1A, IB1=-IB2=10mA  
VCE=10V,IC=50mA, f=100MHz  
Turn-off time  
t(off)  
ns  
Transition frequency  
Notes :  
fT  
100  
MHz  
1.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.  
2. Pulse test: Pulse width300μs,duty cycle2.0%.  
www.jscj-elec.com  
1
Rev. - 2.0  

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