Datasheet > FMMT591

FMMT591

更新时间： 2024-11-01 14:54:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	821K
描述
SOT-23

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中文翻译

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数据手册

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FMMT591 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

FMMT591 TRANSISTOR (PNP)

FEATURES

Low equivalent on-resistance

1. BASE

2. EMITTER

3. COLLECTOR

Marking :591

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-80

-60

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-1

I_CM

Peak Pulse Current

-2

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

250

500

℃/W

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=-100μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBO

-80

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-10mA, I_B=0

-60

-5

I_E=-100μA, I_C=0

μA

V_CB=-60V, I_E=0

-0.1

Emitter cut-off current

I_EBO

V_EB=-4V, I_C=0

h_FE(1)

V_CE=-5V, I_C=-1mA

V_CE=-5V, I_C=-500mA

V_CE=-5V, I_C=-1A

100

h_FE(2)

300

DC current gain

h_FE(3)

h_FE(4)

V_CE=-5V, I_C=-2A

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

I_C=-500mA, I_B=-50mA

I_C=-1A, I_B=-100mA

V_CE=-5V, I_C=-1A

-0.3

-0.6

-1.2

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_BE

Transition frequency

150

MHz

f_T

V_CE=-10V,I_C=-50mA,,f=100MHz

Collector output capacitance

C_ob

V_CB=-10V,f=1MHz

¹Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

www.jscj-elec.com

Rev. - 2.0

12 3 4

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