Datasheet > FMMT589

FMMT589

更新时间： 2024-11-09 12:04:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	270K
描述
Low equivalent on-resistance

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中文翻译

获取价格

数据手册

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FMMT589 数据手册

SSS

SMD Type

MMM

DDD

TTT

yyy

ppp

eee

Trr

raa

ann

nss

sii

iss

stt

tIIo

oCCr

rss

Product specification

FMMT589

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low equivalent on-resistance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

-50

-30

-5

-2

Peak collector current

Collector current

I^C

-1

Base current

I^B

-200

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-50

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO IC=-100ìA

V^(BR)CEOI^C=-10mA

V^(BR)EBOI^E=-100ìA

I^CBO

I^EBO

V^CB=-30V

V^EB=-4V

-100

-0.35

-1.2

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

V^CE(sat) I^C=-1A,I^B=-100mA

VBE(sat) IC=-1A,IB=-100mA

V^BE(ON)I^C=-1A,V^CE=-2V

I^C=-1mA, V^CE=-2V*

-1.1

100

I^C=-500mA,V^CE=-2V*

h^FE

I^C=-1A, V^CE=-2V*

300

Static Forward Current TransferRatio

I^C=-2A, V^CE=-2V*

Current-gain-bandwidth product

Output capacitance

f^T

IC=-100mA,VCE=-5V,f=100MHz

V^CB=-10V,f=1MHz

100

MHz

C^obo

* Pulse test: tp

Marking

300 ìs; d

0.02.

589

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4008-318-123

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