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FMMT4124 PDF预览

FMMT4124

更新时间: 2024-11-14 04:18:43
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管光电二极管局域网
页数 文件大小 规格书
1页 31K
描述
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

FMMT4124 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.23最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

FMMT4124 数据手册

  
SOT23 NPN SILICON PLANAR  
SWITCHING TRANSISTOR  
FMMT4124  
ISSUE 2 – MARCH 94  
PARTMARKING DETAIL –  
ZC  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VALUE  
UNIT  
V
Collector-Base Voltage  
30  
Collector-Emitter Voltage  
VCEO  
25  
5
V
Emitter-Base Voltage  
VEBO  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
200  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
30  
25  
5
IC=10µA  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=1mA*  
Emitter-Base  
Breakdown Voltage  
IE=10µA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
50  
50  
0.3  
nA  
nA  
V
VCB=20V  
IEBO  
VEB=3V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
IC=50mA, IB=5mA*  
Base-Emitter  
SaturationVoltage  
VBE(sat)  
hFE  
0.95  
360  
V
IC=50mA, IB=5mA*  
Static Forward  
Current Transfer Ratio  
120  
60  
IC=2mA, VCE=1V*  
IC=50mA, VCE=1V*  
Transistion Frequency  
Output Capacitance  
Input Capacitance  
Noise Figure  
fT  
300  
MHz  
pF  
IC=10mA, VCE=20V, f=100MHz  
VCB=5V, IE=0, f=140KHz  
Cobo  
Cibo  
N
4
8
6
pF  
VBE=0.5V, IE=0, f=140KHz  
dB  
IC=200µA, VCE=5V, Rg=2kΩ  
f=30Hz to 15KHz at 3dB points  
Small Signal Current  
Transfer  
hfe  
120  
480  
IC=2mA, VCE=1V, f=1KHz  
SWITCHING CHARACTERISTICS (at T  
amb  
= 25°C).  
PARAMETER  
Delay Time  
Rise Time  
SYMBOL  
TYP.  
UNIT  
CONDITIONS  
td  
tr  
ts  
tf  
24  
ns  
ns  
ns  
ns  
VCC=3V, VBE(off=) 0.5V  
IC=10mA, IB1=1mA  
13  
Storage Time  
Fall Time  
125  
11  
VCC=3V, IC=10mA  
IB1=IB2=1mA  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  

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