Datasheet > FML60N150S2FDHF

FML60N150S2FDHF

更新时间： 2024-03-03 10:10:52

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1106K
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DFN8x8

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FML60N150S2FDHF 数据手册

www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FML60N150S2FDHF

Super J MOS^®S2 series

Features

N-Channel enhancement mode power MOSFET

Package and Internal circuit chart

Pb-free lead terminal

RoHS compliant

Drain ⑤

Halogen-free molding compound

MSL:1, Reﬂow available

⑤

Gate ①

Applications

For switching

④

③

Sub-Source

for gate driꢁe ②

②

①

Source ③,④

DFN8x8

(ꢀut ꢁieꢂ: see to 7/8 page)

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

28.7

18.2

83.6

±30

Drain-Source Voltage

DSX

VGS = - 30 V

=25°C Note*1,2

=100°C Note*1,2

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Note *2

Non-Repetitive

Maximum Avalanche Current

3.5

Note *3

Note *4

Non-Repetitive

Maximum Avalanche Energy

517.5

Maximum MOSFET dv/dt

dv^DS/dt

28.7

V/ns

VDS≤ 600V

=25°C Note*1,2

=100°C Note*1,2

Continuous

Diode Forward Current

18.2

Pulsed Diode Forward Current

Peak Diode Recovery dv/dt

Peak Diode Recovery -di^DR/dt

DRP

83.6

Note *2

Note *5

Note *6

dv/dt

V/ns

A/μs

-di^DR/dt

100

159

=25°C

Maximum Power Dissipation

Ptot

2.78

=25°C

Operating Channel Temperature

Storage Temperature

150

°C

stg

-55 to +150

Note *1 : Maximum duty cycle D=0.55

Note *2 : Limited by maximum channel temperature.

Note *3 : T^ch≤ 150 °C, See Figure 1 and 2.

Note *4 : Starting T^ch= 25 °C, IAS = 2.1 A, L = 215 mH, VDD = 60 V, RG = 50 Ω, See Figure 1 and 2.

E^ASlimited by maximum channel temperature and avalanche current.

Note *5 : I^DR≤ 22.7 A , -diDR/dt ≤ 100 A/μs, VDS peak ≤ 600 V, Tch ≤ 150 °C.

Note *6 : I^DR≤ 22.7 A , dv/dt ≤ 30 V/ns, VDS peak ≤ 600 V, Tch ≤ 150 °C.

9239b

2021/9

12 3 4 5 6 7 8

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