Datasheet > FML60N091S2HF

FML60N091S2HF

更新时间： 2024-10-31 15:18:55

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	964K
描述
DFN8x8

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FML60N091S2HF 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FML60N091S2HF

Super J MOS^®S2 series

Features

N-Channel enhancement mode power MOSFET

Package and Internal circuit chart

Pb-free lead terminal

RoHS compliant

Drain ⑤

Halogen-free molding compound

MSL:1, Reﬂow available

⑤

Gate ①

Applications

For switching

④

③

Sub-Source

for gate drive ②

②

①

Source ③,④

DFN8x8

(Out view: see to 7/8 page)

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

VGS=-30V

42.3

26.8

125.6

±30

=25°C Note*1,2

=100°C Note*1,2

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Note *2

Non-Repetitive

Maximum Avalanche Current

5.5

Note *3

Note *4

Non-Repetitive

Maximum Avalanche Energy

964.2

Maximum MOSFET dv/dt

dv^DS/dt

42.3

V/ns

VDS≤ 600V

=25°C Note*1,2

=100°C Note*1,2

Continuous

Diode Forward Current

26.8

Pulsed Diode Forward Current

Peak Diode Recovery dv/dt

Peak Diode Recovery -di^DR/dt

DRP

125.6

Note *2

Note *5

Note *6

dv/dt

V/ns

A/μs

-di^DR/dt

100

263

=25°C

Maximum Power Dissipation

Ptot

2.78

=25°C

Operating Channel Temperature

Storage Temperature

150

°C

stg

-55 to +150

Note *1 : Maximum duty cycle D=0.55

Note *2 : Limited by maximum channel temperature.

Note *3 : T^ch≤ 150 °C, See Figure 1 and 2.

Note *4 : Starting T^ch= 25 °C, IAS = 3.3 A, L = 162 mH, VDD = 60 V, RG = 50 Ω, See Figure 1 and 2.

E^ASlimited by maximum channel temperature and avalanche current.

Note *5 : I^DR≤ 37.1 A , -diDR/dt ≤ 100 A/μs, VDS peak ≤ 600 V, Tch ≤ 150 °C.

Note *6 : I^DR≤ 37.1 A , dv/dt ≤ 15 V/ns, VDS peak ≤ 600 V, Tch ≤ 150 °C.

9232

NOVEMBER 2017

12 3 4 5 6 7 8

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