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FML16N60ES PDF预览

FML16N60ES

更新时间： 2024-11-05 10:34:51
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
5页 448K
描述
N-CHANNEL SILICON POWER MOSFET

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FML16N60ES 数据手册

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http://www.fujisemi.com  
FML16N60ES  
FUJI POWER MOSFET  
3
N-CHANNEL SILICON POWER MOSFET  
Super FAP-E series  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Maintains both low power loss and low noise  
Lower RDS(on) characteristic  
TFP  
9.0 0.2  
±
0.4 0.1  
±
7.0 0.2  
±
4
More controllable switching dv/dt by gate resistance  
Smaller VGS ringing waveform during switching  
Narrow band of the gate threshold voltage (4.2±0.5V)  
High avalanche durability  
D
4
3
2.0  
2.0 2.5  
G
1
2
1.5  
S1  
Applications  
Switching regulators  
1
2
3
S2  
Solder  
Plating  
1.0 0.2  
±
3.6 0.2  
±
UPS (Uninterruptible Power Supply)  
DC-DC converters  
1.0 0.2  
±
(4.0)  
(3.2)  
(0.8)  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
VDS  
600  
600  
Drain-Source Voltage  
VDSX  
V
VGS = -30V  
Continuous Drain Current  
I
I
D
±16  
A
Pulsed Drain Current  
DP  
±64  
A
Gate-Source Voltage  
VGS  
±30  
V
Repetitive and Non-Repetitive Maximum Avalanche Current  
Non-Repetitive Maximum Avalanche Energy  
Repetitive Maximum Avalanche Energy  
Peak Diode Recovery dV/dt  
I
AR  
16  
A
Note*1  
Note*2  
Note*3  
Note*4  
Note*5  
E
E
AS  
AR  
554.8  
27  
mJ  
mJ  
dV/dt  
-di/dt  
3.8  
kV/µs  
A/µs  
Peak Diode Recovery -di/dt  
100  
1.44  
270  
Ta=25°C  
Tc=25°C  
Maximum Power Dissipation  
P
D
W
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
Tstg  
-55 to +150  
Electrical Characteristics at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
-
max.  
-
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
I
I
D
=250µA, VGS=0V  
=250µA, VDS=VGS  
DS=600V, VGS=0V  
DS=480V, VGS=0V  
GS=±30V, VDS=0V  
600  
V
V
VGS (th)  
D
3.7  
-
4.2  
-
4.7  
25  
V
V
V
T
ch=25°C  
Zero Gate Voltage Drain Current  
I
DSS  
µA  
Tch=125°C  
-
-
250  
100  
0.47  
-
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
GSS  
-
10  
0.40  
10  
2100  
230  
13  
43  
41  
nA  
Ω
R
DS (on)  
I
I
D
=8A, VGS=10V  
=8A, VDS=25V  
-
g
fs  
D
5
-
S
Ciss  
Coss  
Crss  
td(on)  
tr  
3150  
345  
19.5  
64.5  
61.5  
141  
30  
V
V
DS=25V  
GS=0V  
Output Capacitance  
-
pF  
ns  
f=1MHz  
cc=300V  
GS=10V  
Reverse Transfer Capacitance  
-
-
V
Turn-On Time  
Turn-Off Time  
-
V
I
R
D
=8A  
=18Ω  
td(off)  
tf  
-
94  
20  
56  
20  
21  
9.5  
-
G
-
Total Gate Charge  
Q
Q
Q
Q
G
-
114  
25.5  
33  
Vcc=300V  
Gate-Source Charge  
GS  
SW  
GD  
-
I
D
=16A  
nC  
VGS=10V  
Drain-Source Crossover Charge  
Gate-Drain Charge  
-
-
14.5  
-
Avalanche Capability  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
I
AV  
L=1.74mH, Tch=25°C  
16  
-
A
V
VSD  
I
F
=16A, VGS=0V, Tch=25°C  
0.90  
0.7  
9
1.08  
-
trr  
-
µS  
µC  
I
F
=16A, VGS=0V  
-di/dt=100A/µs, Tch=25°C  
Qrr  
-
-
Thermal Characteristics  
Description  
Symbol  
Test Conditions  
Channel to case  
min.  
typ.  
max.  
0.46  
87  
Unit  
°C/W  
°C/W  
°C/W  
Rth (ch-c)  
Rth (ch-a)  
Rth (ch-a)  
Thermal resistance  
Channel to Ambient  
Channel to Ambient Note*6  
52  
Note *1 : Tch≤150°C  
Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, R  
Note *4 : I  
Note *5 : I  
F
≤-I  
≤-I  
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.  
, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C.  
G
=10Ω,  
F
D
E
AS limited by maximum channel temperature and avalanche current.  
Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2)  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
1
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