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FML12N50ES
FUJI POWER MOSFET
3
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TFP
9.0 0.2
±
0.4 0.1
±
7.0 0.2
±
4
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.7±0.5V)
High avalanche durability
D
4
3
2.0
2.0 2.5
G
1
2
1.5
S1
Applications
Switching regulators
1
2
3
S2
Solder
Plating
1.0 0.2
±
3.6 0.2
±
UPS (Uninterruptible Power Supply)
DC-DC converters
1.0 0.2
±
(4.0)
(3.2)
(0.8)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
500
500
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±12
A
Pulsed Drain Current
DP
±48
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
12
A
Note*1
Note*2
Note*3
Note*4
Note*5
E
E
AS
AR
460.8
18
mJ
mJ
dV/dt
-di/dt
6.3
kV/µs
A/µs
Peak Diode Recovery -di/dt
100
1.44
180
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to +150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=500V, VGS=0V
DS=400V, VGS=0V
GS=±30V, VDS=0V
500
V
V
VGS (th)
D
3.2
3.7
-
4.2
25
V
V
V
T
ch=25°C
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
-
250
100
0.50
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
nA
Ω
R
DS (on)
I
I
D
=6A, VGS=10V
=6A, VDS=25V
-
0.427
9
g
fs
D
4.5
S
Ciss
Coss
Crss
td(on)
tr
-
-
1400
160
11.5
31
2100
240
17.5
46.5
27
V
V
DS=25V
GS=0V
Output Capacitance
pF
ns
f=1MHz
cc=300V
GS=10V
Reverse Transfer Capacitance
-
-
V
Turn-On Time
Turn-Off Time
-
18
V
I
R
D
=6A
=15Ω
td(off)
tf
-
83
16
124.5
27
G
-
Total Gate Charge
Q
Q
Q
Q
G
-
43
13
56
V
cc=250V
=12A
Gate-Source Charge
GS
SW
GD
-
23
I
D
nC
VGS=10V
Drain-Source Crossover Charge
Gate-Drain Charge
-
6
10
-
14
21
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
AV
L=2.44mH, Tch=25°C
12
-
-
-
A
V
V
SD
I
F
=12A, VGS=0V, Tch=25°C
0.86
0.37
5.0
1.30
-
trr
-
µS
µC
I
F
=12A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to case
min.
typ.
max.
0.69
87
Unit
°C/W
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Rth (ch-a)
Thermal resistance
Channel to Ambient
Channel to Ambient Note*6
52
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, R
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C.
G
=10Ω,
F
D
E
AS limited by maximum channel temperature and avalanche current.
Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
1