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FML12N50ES PDF预览

FML12N50ES

更新时间: 2024-11-01 10:34:51
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 414K
描述
N-CHANNEL SILICON POWER MOSFET

FML12N50ES 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F4
针数:4Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.76
Is Samacsys:N其他特性:LOW NOISE
雪崩能效等级(Eas):460.8 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):180 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FML12N50ES 数据手册

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http://www.fujisemi.com  
FML12N50ES  
FUJI POWER MOSFET  
3
N-CHANNEL SILICON POWER MOSFET  
Super FAP-E series  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Maintains both low power loss and low noise  
Lower RDS(on) characteristic  
TFP  
9.0 0.2  
±
0.4 0.1  
±
7.0 0.2  
±
4
More controllable switching dv/dt by gate resistance  
Smaller VGS ringing waveform during switching  
Narrow band of the gate threshold voltage (3.7±0.5V)  
High avalanche durability  
D
4
3
2.0  
2.0 2.5  
G
1
2
1.5  
S1  
Applications  
Switching regulators  
1
2
3
S2  
Solder  
Plating  
1.0 0.2  
±
3.6 0.2  
±
UPS (Uninterruptible Power Supply)  
DC-DC converters  
1.0 0.2  
±
(4.0)  
(3.2)  
(0.8)  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
VDS  
500  
500  
Drain-Source Voltage  
VDSX  
V
VGS = -30V  
Continuous Drain Current  
I
I
D
±12  
A
Pulsed Drain Current  
DP  
±48  
A
Gate-Source Voltage  
VGS  
±30  
V
Repetitive and Non-Repetitive Maximum Avalanche Current  
Non-Repetitive Maximum Avalanche Energy  
Repetitive Maximum Avalanche Energy  
Peak Diode Recovery dV/dt  
I
AR  
12  
A
Note*1  
Note*2  
Note*3  
Note*4  
Note*5  
E
E
AS  
AR  
460.8  
18  
mJ  
mJ  
dV/dt  
-di/dt  
6.3  
kV/µs  
A/µs  
Peak Diode Recovery -di/dt  
100  
1.44  
180  
Ta=25°C  
Tc=25°C  
Maximum Power Dissipation  
P
D
W
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
Tstg  
-55 to +150  
Electrical Characteristics at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
-
max.  
-
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
I
I
D
=250µA, VGS=0V  
=250µA, VDS=VGS  
DS=500V, VGS=0V  
DS=400V, VGS=0V  
GS=±30V, VDS=0V  
500  
V
V
VGS (th)  
D
3.2  
3.7  
-
4.2  
25  
V
V
V
T
ch=25°C  
-
Zero Gate Voltage Drain Current  
I
DSS  
µA  
Tch=125°C  
-
-
250  
100  
0.50  
-
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
GSS  
-
10  
nA  
R
DS (on)  
I
I
D
=6A, VGS=10V  
=6A, VDS=25V  
-
0.427  
9
g
fs  
D
4.5  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
1400  
160  
11.5  
31  
2100  
240  
17.5  
46.5  
27  
V
V
DS=25V  
GS=0V  
Output Capacitance  
pF  
ns  
f=1MHz  
cc=300V  
GS=10V  
Reverse Transfer Capacitance  
-
-
V
Turn-On Time  
Turn-Off Time  
-
18  
V
I
R
D
=6A  
=15Ω  
td(off)  
tf  
-
83  
16  
124.5  
27  
G
-
Total Gate Charge  
Q
Q
Q
Q
G
-
43  
13  
56  
V
cc=250V  
=12A  
Gate-Source Charge  
GS  
SW  
GD  
-
23  
I
D
nC  
VGS=10V  
Drain-Source Crossover Charge  
Gate-Drain Charge  
-
6
10  
-
14  
21  
Avalanche Capability  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
I
AV  
L=2.44mH, Tch=25°C  
12  
-
-
-
A
V
V
SD  
I
F
=12A, VGS=0V, Tch=25°C  
0.86  
0.37  
5.0  
1.30  
-
trr  
-
µS  
µC  
I
F
=12A, VGS=0V  
-di/dt=100A/µs, Tch=25°C  
Qrr  
-
-
Thermal Characteristics  
Description  
Symbol  
Test Conditions  
Channel to case  
min.  
typ.  
max.  
0.69  
87  
Unit  
°C/W  
°C/W  
°C/W  
Rth (ch-c)  
Rth (ch-a)  
Rth (ch-a)  
Thermal resistance  
Channel to Ambient  
Channel to Ambient Note*6  
52  
Note *1 : Tch≤150°C  
Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, R  
Note *4 : I  
Note *5 : I  
F
≤-I  
≤-I  
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.  
, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C.  
G
=10Ω,  
F
D
E
AS limited by maximum channel temperature and avalanche current.  
Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2)  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
1

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