生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.7 |
其他特性: | LOW NOISE | 雪崩能效等级(Eas): | 471.5 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 13 A | 最大漏极电流 (ID): | 13 A |
最大漏源导通电阻: | 0.58 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 225 W |
最大脉冲漏极电流 (IDM): | 52 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FMI13N60ES | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI16N50E | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI16N50ES | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI16N60E | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFETFeatures | |
FMI16N60E | ACTEL |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI16N60ES | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI20N50E | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI20N50ES | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
FMI49N20T2 | FUJI |
获取价格 |
Power Field-Effect Transistor, 49A I(D), 200V, 0.047ohm, 1-Element, N-Channel, Silicon, Me | |
FMI80N10T2 | FUJI |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, M |