Datasheet > FMG8A

FMG8A

更新时间： 2024-01-25 12:37:58

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	73K
描述
Emitter common (dual digital transistors)

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中文翻译

获取价格

技术参数
数据手册

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FMG8A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.1 A
元件数量：	2	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	Base Number Matches：	1

FMG8A 数据手册

EMG8 / UMG8N / FMG8A

Transistors

Emitter common

(dual digital transistors)

EMG8 / UMG8N / FMG8A

zFeatures

zExternal dimensions (Unit : mm)

1) Two DTC143Z chips in a EMT or UMT or SMT

package.

EMG8

2) Mounting cost and area can be cut in half.

( )

(

)

1.2

1.6

zStructure

Each lead has same dimensions

Epitaxial planar type

NPN silicon transistor

(Built-in resistor type)

ROHM

: EMT5

Abbreviated symbol : G8

UMG8N

The following characteristics apply to both the DTr1 and

DTr2.

1.25

2.1

0.1Min.

zEquivalent circuit

Each lead has same dimensions

EMG8 / UMG8N

FMG8A

ROHM

EIAJ

UMT5

SC-88A

(3)

(4)

(5)

(3)

(2)

(1)

=4.7kΩ

=47kΩ

=4.7kΩ

=47kΩ

Abbreviated symbol : G8

DTr2

DTr1

DTr2

DTr1

FMG8A

(2)

(1)

(4)

(5)

1.6

2.8

zAbsolute maximum ratings (Ta = 25°C)

0.3to0.6

Each lead has same dimensions

Limits

Parameter

Symbol

Unit

ROHM

EIAJ

SMT5

Supply voltage

SC-74A

Abbreviated symbol : G8

Input voltage

VIN

−5

100

Output current

C (Max.)

∗

EMG8, UMG8N

150 (TOTAL)

300 (TOTAL)

150

Power

dissipation

FMG8A

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/2

12 3

中文翻译

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