Datasheet > FMG7A

FMG7A

更新时间： 2024-11-28 23:52:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	37K
描述
TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-25

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中文翻译

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数据手册

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FMG7A 数据手册

EMG4 / EMH4 / UMG4N / UMG7N / UMH4N / UMH8N /

FMG4A / FMG7A / IMH4A / IMH8A

Transistors

General purpose (dual digital transistors)

EMG4 / EMH4 / UMG4N / UMG7N / UMH4N / UMH8N

FMG4A / FMG7A / IMH4A / IMH8A

zFeatures

1) Two DTC114T chips in a EMT or UMT or SMT package.

zEquivalent circuit

EMG4 / UMG4N

EMH4 / UMH4N

UMG7N

UMH8N

(3)

(2)

(1)

(3)

(2)

(1)

(3)

(2)

(1)

(3)

(2)

(1)

(4)

(5)

(4)

(5)

(4)

(5)

(6)

(4) (5)

(6)

FMG4A

IMH4A

FMG7A

IMH8A

(4)

(5)

(3)

(4)

(5)

(4)

(5)

(3)

(4)

(5)

(2)

(1)

(2)

(1)

(3)

(2)

(1)

(3) (2)

(1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

100

EMG4 / EMH4 / UMG4N / UMG7N / UMH4N / UMH8N

Power

150(TOTAL)

300(TOTAL)

150

dissipation

FMG4A / FMG7A / IMH4A / IMH8A

Junction temperature

Storage temperature

°C

Tstg

−55~+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

zElectrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

Typ.

−

Max.

−

Conditions

Unit

=50µA

=1mA

−

=50µA

CB=50V

EB=4V

CBO

EBO

CE(sat)

−

0.5

0.3

600

−

µA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

CE=5V, I

CE=10V, I

=10mA/1mA

100

−

250

−

=1mA

Transition frequency

MHz

kΩ

=−5mA, f=100MHz

Input resistance

−

Transition frequency of the device.

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