5秒后页面跳转
FMG1G300US60H PDF预览

FMG1G300US60H

更新时间: 2024-11-09 20:10:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制晶体管
页数 文件大小 规格书
7页 490K
描述
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, 7PM-IA, 7 PIN

FMG1G300US60H 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:7PM-IA, 7 PIN针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):300 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:1端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):892 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):480 ns
标称接通时间 (ton):470 nsVCEsat-Max:2.7 V
Base Number Matches:1

FMG1G300US60H 数据手册

 浏览型号FMG1G300US60H的Datasheet PDF文件第2页浏览型号FMG1G300US60H的Datasheet PDF文件第3页浏览型号FMG1G300US60H的Datasheet PDF文件第4页浏览型号FMG1G300US60H的Datasheet PDF文件第5页浏览型号FMG1G300US60H的Datasheet PDF文件第6页浏览型号FMG1G300US60H的Datasheet PDF文件第7页 
IGBT  
FMG1G300US60H  
Molding Type Module  
General Description  
Fairchild IGBT Power Module provides low conduction and  
switching losses as well as short circuit ruggedness. It’s  
designed for the applications such as motor control,  
uninterrupted power supplies (UPS) and general inverters  
where short-circuit ruggedness is required.  
Features  
Short Circuit Rated Time; 10us @ T =100°C, V = 15V  
C GE  
High Speed Switching  
Low Saturation Voltage: V (sat) = 2.1 V @ I = 300A  
CE  
C
Package Code : 7PM-IA  
High Input Impedance  
Fast & Soft Anti-Parallel FWD  
UL Certified No.E209204  
E1/C2  
Application  
AC & DC Motor Controls  
General Purpose Inverters  
Robotics  
Servo Controls  
UPS  
C1  
E2  
G1  
E1  
Internal Circuit Diagram  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Description  
FMG1G300US60H  
Units  
V
V
V
Collector-Emitter Voltage  
600  
± 20  
CES  
GES  
Gate-Emitter Voltage  
V
I
I
I
I
Collector Current  
Pulsed Collector Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Short Circuit Withstand Time  
Operating Junction Temperature  
@ T = 80°C  
300  
A
C
C
600  
A
CM (1)  
F
FM  
@ T = 80°C  
300  
A
C
600  
A
P
@ T  
=
C
25°C  
892  
W
us  
°C  
D
SC  
J
T
T
@ T = 100°C  
10  
C
-40 to +150  
T
Storage Temperature Range  
-40 to +125  
°C  
STG  
V
Isolation Voltage  
Power Terminal Screw : M6  
Mounting Screw : M6  
@ AC 1minute  
2500  
4.0  
4.0  
V
N.m  
N.m  
ISO  
Mounting Torque  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
©2004 Fairchild Semiconductor Corporation  
FMG1G300US60H Rev. A  

与FMG1G300US60H相关器件

型号 品牌 获取价格 描述 数据表
FMG1G300US60HE ROCHESTER

获取价格

300A, 600V, N-CHANNEL IGBT, 7PM-HA, 7 PIN
FMG1G300US60LE ROCHESTER

获取价格

300A, 600V, N-CHANNEL IGBT, 7PM-HA, 7 PIN
FMG1G300US60LE FAIRCHILD

获取价格

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, 7PM-HA, 7 PIN
FMG1G400US60L FAIRCHILD

获取价格

Molding Type Module
FMG1G50US60 FAIRCHILD

获取价格

Molding Type Module
FMG1G50US60H FAIRCHILD

获取价格

Molding Type Module
FMG1G50US60L FAIRCHILD

获取价格

Molding Type Module
FMG1G75US60H FAIRCHILD

获取价格

Molding Type Module
FMG1G75US60L FAIRCHILD

获取价格

Molding Type Module
FMG1GE YANGJIE

获取价格

SOD-323HE