FMD 47-06KC5
FDM 47-06KC5
Advanced Technical Information
CoolMOS™ 1) Pow er MOSFET
with HiPerDyn™ FRED
ID25
VDSS
=
47 A
= 600 V
RDS(on) max = 0.045 Ω
Buck and Boost Topologies
ISOPLUS i4™
3
3
5
4
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
T
D
T
1
4
q
isolated back
surface
E72873
5
1
2
D
2
FMD
FDM
Features
MOSFET T
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C
600
20
V
VGS
V
ID25
ID90
TC = 25°C
TC = 90°C
47
32
A
A
EAS
EAR
single pulse
repetitive
1950
3
mJ
mJ
ID = 11 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = 44 A
40
3
45
mΩ
VGS(th)
IDSS
VDS = VGS; ID = 3 mA
VDS = VDSS; VGS = 0 V
2.5
3.5
10
V
Applications
TVJ = 25°C
TVJ = 125°C
µA
µA
50
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
IGSS
VGS
=
20 V; VDS = 0 V
100
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
6800
320
pF
pF
Advantages
Qg
Qgs
Qgd
150
35
50
190
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
td(on)
tr
td(off)
tf
Eon
Eoff
Erec off
30
20
100
10
tbd
tbd
tbd
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 44 A; RG = 3.3 Ω
ns
mJ
mJ
mJ
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
RthJC
RthCH
0.45 K/W
K/W
with heat transfer paste
0.25
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
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