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FMD47-06KC5 PDF预览

FMD47-06KC5

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关晶体管散热片
页数 文件大小 规格书
4页 145K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。 内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。 这些器件经过了雪崩评级,因此可确保稳定可靠的运行。 功能与特色: 应用: 优点:

FMD47-06KC5 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:NBase Number Matches:1

FMD47-06KC5 数据手册

 浏览型号FMD47-06KC5的Datasheet PDF文件第2页浏览型号FMD47-06KC5的Datasheet PDF文件第3页浏览型号FMD47-06KC5的Datasheet PDF文件第4页 
FMD 47-06KC5  
FDM 47-06KC5  
Advanced Technical Information  
CoolMOS™ 1) Pow er MOSFET  
with HiPerDyn™ FRED  
ID25  
VDSS  
=
47 A  
= 600 V  
RDS(on) max = 0.045 Ω  
Buck and Boost Topologies  
ISOPLUS i4™  
3
3
5
4
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
T
D
T
1
4
q
isolated back  
surface  
E72873  
5
1
2
D
2
FMD  
FDM  
Features  
MOSFET T  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 40 pF)  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- high blocking capability  
- lowest resistance  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
due to reduced chip thickness  
• Enhanced total power density  
• HiPerDyn™ FRED  
- consisting of series connected diodes  
- enhanced dynamic behaviour for  
high frequency operation  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
47  
32  
A
A
EAS  
EAR  
single pulse  
repetitive  
1950  
3
mJ  
mJ  
ID = 11 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
RDSon  
VGS = 10 V; ID = 44 A  
40  
3
45  
mΩ  
VGS(th)  
IDSS  
VDS = VGS; ID = 3 mA  
VDS = VDSS; VGS = 0 V  
2.5  
3.5  
10  
V
Applications  
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
50  
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
6800  
320  
pF  
pF  
Advantages  
Qg  
Qgs  
Qgd  
150  
35  
50  
190  
nC  
nC  
nC  
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
• High power density  
• High reliability  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec off  
30  
20  
100  
10  
tbd  
tbd  
tbd  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 44 A; RG = 3.3 Ω  
ns  
mJ  
mJ  
mJ  
1) CoolMOSis a trademark of  
Infineon Technologies AG.  
RthJC  
RthCH  
0.45 K/W  
K/W  
with heat transfer paste  
0.25  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209a  
1 - 3  

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