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FMC03N60E PDF预览

FMC03N60E

更新时间: 2024-11-29 12:20:23
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
5页 580K
描述
N-CHANNEL SILICON POWER MOSFETFeatures

FMC03N60E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.74
Is Samacsys:N其他特性:LOW NOISE
雪崩能效等级(Eas):237 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:2.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FMC03N60E 数据手册

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FMC03N60E  
FUJI POWER MOSFET  
3
N-CHANNEL SILICON POWER MOSFET  
Super FAP-E series  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Maintains both low power loss and low noise  
Lower RDS(on) characteristic  
T-Pack(S)  
More controllable switching dv/dt by gate resistance  
Smaller VGS ringing waveform during switching  
Narrow band of the gate threshold voltage (3.0±0.5V)  
High avalanche durability  
Drain(D)  
Gate(G)  
Applications  
Source(S)  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
VDS  
600  
600  
±3  
Drain-Source Voltage  
VDSX  
V
VGS = -30V  
Continuous Drain Current  
I
I
D
A
Pulsed Drain Current  
DP  
±12  
A
Gate-Source Voltage  
VGS  
±30  
V
Repetitive and Non-Repetitive Maximum AvalancheCurrent  
Non-Repetitive Maximum Avalanche Energy  
Repetitive Maximum Avalanche Energy  
Peak Diode Recovery dV/dt  
I
AR  
3
A
Note*1  
Note*2  
Note*3  
Note*4  
E
E
AS  
AR  
237  
mJ  
mJ  
kV/µs  
A/µs  
6.0  
dV/dt  
-di/dt  
4.2  
Peak Diode Recovery -di/dt  
100  
Note*5  
1.67  
60  
Ta=25°C  
Tc=25°C  
Maximum Power Dissipation  
P
D
W
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
Tstg  
-55 to + 150  
Electrical Characteristics at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
-
max.  
-
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
I
I
D
=250µA, VGS=0V  
=250µA, VDS=VGS  
DS=600V, VGS=0V  
DS=480V, VGS=0V  
GS=±30V, VDS=0V  
600  
V
V
VGS (th)  
D
2.5  
3.0  
-
3.5  
25  
V
V
V
T
ch=25°C  
-
Zero Gate Voltage Drain Current  
I
DSS  
µA  
Tch=125°C  
-
-
250  
100  
2.30  
-
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
GSS  
-
10  
nA  
R
DS (on)  
I
I
D
=1.5A, VGS=10V  
=1.5A, VDS=25V  
-
1.966  
3.5  
610  
59  
g
fs  
D
1.75  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
3
-
-
-
915  
88.5  
6.8  
10.5  
11.3  
76.5  
24.0  
32  
V
V
DS=25V  
GS=0V  
Output Capacitance  
pF  
ns  
f=1MHz  
Reverse Transfer Capacitance  
4.5  
7
V
V
cc=300V  
GS=10V  
Turn-On Time  
Turn-Off Time  
7.5  
51  
I
R
D
=1.5A  
=27Ω  
td(off)  
tf  
G
16  
Total Gate Charge  
Q
Q
Q
G
21.5  
5.5  
6
Vcc=300V  
Gate-Source Charge  
Gate-Drain Charge  
GS  
GD  
I
D
=3A  
8
nC  
VGS=10V  
9
Avalanche Capability  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
I
AV  
L=19.3mH, Tch=25°C  
-
-
A
V
VSD  
I
F
=3A, VGS=0V, Tch=25°C  
0.86  
0.38  
1.8  
1.30  
-
trr  
µS  
µC  
I
F
=3A, VGS=0V  
-di/dt=100A/µs, Tch=25°C  
Qrr  
-
Thermal Characteristics  
Description  
Symbol  
Test Conditions  
Channel to Case  
Channel to Ambient  
min.  
typ.  
max.  
1.200  
62.0  
Unit  
°C/W  
°C/W  
Rth (ch-c)  
Rth (ch-a)  
Thermal resistance  
Note *1 : Tch≤150°C  
Note *2 : Stating Tch=25°C, IAS=1.2A, L=302mH, Vcc=60V, RG=50Ω  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
See to the 'Transient Themal impeadance' graph.  
E
AS limited by maximum channel temperature and avalanche current.  
Note *4 : I  
Note *5 : I  
F
≤-I  
≤-I  
D
, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.  
, dv/dt=4.2kV/μs, Vcc≤BVDSS, Tch≤150°C.  
See to 'Avalanche Energy' graph.  
F
D
1

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