Datasheet > FMBS549_06

FMBS549_06

更新时间： 2024-09-10 03:37:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	184K
描述
PNP Low Saturation Transistor

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FMBS549_06 数据手册

August 2006

FMBS549

PNP Low Saturation Transistor

Features

•

ThIs device is designed with high current gain and low saturation voltage

with collector currents up to 2A continous.

Sourced from process PB.

pin #1

SuperSOT^TM-6 single

Mark: .S1

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

-30

Unit

V_CEO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

I_C

-35

-5

Collector Current - Continuous

-1

-2

Peak Pulse Current

T_J

Junction Temperature

Storage Temperature Range

150

°C

T_STG

- 55 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics *

Symbol

Parameter

Value

700

Unit

P_D

R_θJA

Total Device Dissipation, by R_θJA

Thermal Resistance, Junction to Ambient

°C/W

180

* Device mounted on a 1 in pad of 2 oz copper.

FMBS549 Rev. B

www.fairchildsemi.com

12 3 4 5

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