Datasheet > FMBS2383

FMBS2383

更新时间： 2024-09-10 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	255K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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数据手册

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FMBS2383 数据手册

April 2011

FMBS2383

NPN Epitaxial Silicon Transistor

Features

• Power Amplifier

• Collector-Emitter Voltage : V_CEO=160V

• Current Gain Bandwidth Product : f_T=120MHz

SuperSOT^TM-6

Marking : 2383

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

160

Units

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

160

800

°C/W

°C

I_B

Base Current

160

P_D

Power Dissipation

630

R_θJA

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

200

T_J

150

T_STG

-55 to +150

°C

* note1) : Minimum land pattern size

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Parameter

Test Condition

I_C= 10μA, I_B= 0

Min. Typ. Max. Units

Collector-Base Breakdown Voltage

160

Collector-Emitter Breakdown Voltage I_C= 10mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I_E= 1mA, I_C= 0

V_CB= 120V, I_E= 0

V_BE= 5V, I_C= 0

100

160

1.0

I_EBO

h_FE

V_CE= 5V, I_C= 100mA

V_CE(sat)

V_BE(on)

f_T

Collector-Emitter Saturation Voltage I_C= 500mA, I_B= 50mA

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE= 5V, I_C= 500mA

V_CE= 5V, I_C= 100mA

V_CB= 10V, I_E= 0, f = 1MHz

1.0

120

MHz

C_ob

FMBS2383 Rev. A0

www.fairchildsemi.com

12 3 4 5

中文翻译

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