Datasheet > FMBL1G200US60

FMBL1G200US60

更新时间： 2024-01-06 08:24:22

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	702K
描述
Molding Type Module

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中文翻译

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数据手册

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FMBL1G200US60 数据手册

July 2001

IGBT

FMBL1G200US60

Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power

modules provide low conduction and switching losses as

well as short circuit ruggedness. They are designed for

applications such as motor control, uninterrupted power

supplies (UPS) and general inverters where short circuit

ruggedness is a required feature.

Features

•

UL Certified No. E209204

Short circuit rated 10us @ T = 100°C, V = 15V

High speed switching

Low saturation voltage : V

High input impedance

Package Code : 7PM-BB

= 2.2 V @ I = 200A

CE(sat)

E1/C2

Fast & soft anti-parallel FWD

Application

•

Boost (Step Up) Converter

Internal Circuit Diagram

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

FMBL1G200US60

Units

Collector-Emitter Voltage

600

± 20

CES

GES

Gate-Emitter Voltage

Collector Current

@ T

25°C

200

Pulsed Collector Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

M a x i m u m P o w e r D i s s i p a t i o n

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage

400

CM (1)

@ T = 100°C

200

400

@ T = 100°C

@ T

25°C

830

-40 to +150

-40 to +125

2500

2.0

°C

stg

@ AC 1minute

iso

Power Terminals Screw : M5

Mounting Screw : M6

N.m

Mounting

Torque

2.5

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

FMBL1G200US60 Rev. A

12 3 4 5 6 7...9

中文翻译

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