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FMBL1G200US60 PDF预览

FMBL1G200US60

更新时间: 2024-11-18 22:08:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 702K
描述
Molding Type Module

FMBL1G200US60 数据手册

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July 2001  
IGBT  
FMBL1G200US60  
Molding Type Module  
General Description  
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power  
modules provide low conduction and switching losses as  
well as short circuit ruggedness. They are designed for  
applications such as motor control, uninterrupted power  
supplies (UPS) and general inverters where short circuit  
ruggedness is a required feature.  
Features  
UL Certified No. E209204  
Short circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High speed switching  
Low saturation voltage : V  
High input impedance  
Package Code : 7PM-BB  
= 2.2 V @ I = 200A  
CE(sat)  
C
E1/C2  
Fast & soft anti-parallel FWD  
Application  
E2  
C1  
Boost (Step Up) Converter  
G2  
E2  
Internal Circuit Diagram  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
FMBL1G200US60  
Units  
V
V
V
Collector-Emitter Voltage  
600  
± 20  
CES  
GES  
Gate-Emitter Voltage  
V
I
I
I
I
Collector Current  
@ T  
=
25°C  
200  
A
C
C
Pulsed Collector Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
M a x i m u m P o w e r D i s s i p a t i o n  
Operating Junction Temperature  
Storage Temperature Range  
Isolation Voltage  
400  
A
CM (1)  
F
@ T = 100°C  
200  
A
C
400  
A
FM  
T
@ T = 100°C  
10  
us  
W
SC  
C
P
@ T  
=
C
25°C  
830  
D
J
T
-40 to +150  
-40 to +125  
2500  
2.0  
°C  
°C  
V
T
stg  
V
@ AC 1minute  
iso  
Power Terminals Screw : M5  
Mounting Screw : M6  
N.m  
N.m  
Mounting  
Torque  
2.5  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
©2001 Fairchild Semiconductor Corporation  
FMBL1G200US60 Rev. A  

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