Datasheet > FMBH1G75US60

FMBH1G75US60

更新时间： 2024-02-02 12:22:36

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
9页	671K
描述
TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 600V V(BR)CES \| 75A I(C)

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中文翻译

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数据手册

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FMBH1G75US60 数据手册

March 2001

IGBT

FMBH1G75US60

Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power

modules provide low conduction and switching losses as

well as short circuit ruggedness. They are designed for

applications such as motor control, uninterrupted power

supplies (UPS) and general inverters where short circuit

ruggedness is a required feature.

Features

•

UL Certified No. E209204

Short circuit rated 10us @ T = 100°C, V = 15V

High speed switching

Low saturation voltage : V

High input impedance

Package Code : 7PM-AA

= 2.2 V @ I = 75A

CE(sat)

E1/C2

Fast & soft anti-parallel FWD

Application

•

Buck (Step Down) Converter

Internal Circuit Diagram

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

FMBH1G75US60

Units

Collector-Emitter Voltage

600

± 20

CES

GES

Gate-Emitter Voltage

Collector Curent

@ T

25°C

Pulsed Collector Current

Diode Continuous ForwardCurrent

Diode Maximum Forward Current

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage

150

CM (1)

@ T = 100°C

150

@ T = 100°C

@ T

25°C

310

-40 to +150

-40 to +125

2500

2.0

°C

stg

@ AC 1minute

iso

Power Terminals Screw : M5

Mounting Screw : M5

N.m

Mounting

Torque

2.0

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

FMBH1G75US60 Rev. A

12 3 4 5 6 7...9

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