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FMB2907A

更新时间: 2024-01-30 06:37:02
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
5页 65K
描述
PNP Multi-Chip General Purpose Amplifier

FMB2907A 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.79最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):80 ns最大开启时间(吨):30 ns
Base Number Matches:1

FMB2907A 数据手册

 浏览型号FMB2907A的Datasheet PDF文件第2页浏览型号FMB2907A的Datasheet PDF文件第3页浏览型号FMB2907A的Datasheet PDF文件第4页浏览型号FMB2907A的Datasheet PDF文件第5页 
Discr ete P OWER & Sign a l  
Tech n ologies  
FMB2907A  
FFB2907A  
MMPQ2907A  
B4  
E2  
B2  
C2  
E1  
E4  
B3  
E3  
C1  
B2  
E2  
C1  
B1  
E1  
C4  
C4  
C3  
C2  
B1  
B2  
E2  
C3  
C2  
pin #1  
E1  
B1  
pin #1  
C2  
C1  
C1  
SuperSOT -6  
SC70-6  
Mark: .2F  
SOIC-16  
Mark: .2F  
PNP Multi-Chip General Purpose Amplifier  
This device is designed for use as a general purpose amplifier and switch requiring  
collector currents to 500 mA. Sourced from Process 63.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
60  
V
V
5.0  
600  
V
Collector Current - Continuous  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FFB2907A  
FMB2907A  
MMPQ2907A  
PD  
RθJA  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
300  
2.4  
415  
700  
5.6  
180  
1,000  
8.0  
mW  
mW/°C  
°C/W  
°C/W  
°C/W  
125  
240  
Each Die  
1998 Fairchild Semiconductor Corporation  

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