5秒后页面跳转
FMB-26LS PDF预览

FMB-26LS

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
三垦 - SANKEN 局域网二极管
页数 文件大小 规格书
2页 451K
描述
10A, SILICON, RECTIFIER DIODE, TO-220AB, TO-220F, 3 PIN

FMB-26LS 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.25
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:50 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE

FMB-26LS 数据手册

 浏览型号FMB-26LS的Datasheet PDF文件第2页 
4-4 Schottky Barrier Diodes  
IFSM  
(A)  
IR  
IR(H)  
(mA)  
VR=VRM  
max  
Package  
Axial  
(Body Diameter/Lead Diameter)  
VF  
(V)  
max  
Rth(j-l)  
Rth(j-c)  
(°C/W)  
VRM  
(V)  
IF (AV)  
(A)  
Tj  
(°C)  
Tstg  
(°C)  
IF  
(A)  
(mA)  
VR=VRM  
max  
Ta  
(°C)  
Mass  
(g)  
Part Number  
50Hz  
Single Half Sine Wave  
φ
φ
0.7  
Axial( 2.4/ 0.6)  
AK 06  
EK 06  
EK 16  
RK 16  
RK 36  
RK 46  
10  
10  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
-40 to +150  
0.62  
0.7  
0.7  
1.5  
1.5  
2.0  
3.5  
2.0  
5.0  
5.0  
7.5  
1
30  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
22  
0.13  
0.3  
0.3  
0.45  
0.6  
1.2  
2.1  
2.1  
2.1  
2.1  
2.1  
2.1  
6.5  
0.13  
0.3  
0.3  
0.45  
0.6  
1.2  
2.1  
2.1  
2.1  
φ
φ
0.7  
1.5  
1.5  
2.0  
3.5  
Axial( 2.7/ 0.6)  
0.62  
0.62  
0.62  
0.62  
0.62  
0.62  
0.62  
0.62  
0.7  
1
1
30  
55  
20  
17  
15  
12  
8
φ
φ
Axial( 2.7/ 0.78)  
25  
φ
φ
Axial( 4.0/ 0.78)  
25  
1
55  
φ
φ
Axial( 4.0/ 0.98)  
40  
2
70  
φ
φ
Axial( 6.5/ 1.4)  
70  
3
125  
55  
4.0 TO-220F(Center-tap) FMB-26  
6.0 TO-220F2Pin FMB-G16L  
40  
1
4
60  
50  
5
175  
175  
175  
275  
400  
350  
30  
4
10 TO-220F(Center-tap) FMB-26L  
15 TO-220F(Center-tap) FMW-2156  
20 TO-220F(Center-tap) FMB-2206  
30 TO-220F(Center-tap) FMB-2306  
30 TO-3PF(Center-tap) FMW-4306  
50  
2.5  
5
4
100  
150  
150  
150  
10  
4
0.7 10.0  
8
4
0.7  
0.7  
15  
15  
8
4
3
2
φ
φ
0.7  
0.7  
1.5  
1.5  
2.0  
3.5  
Axial( 2.4/ 0.6)  
AK 09  
EK 09  
EK 19  
RK 19  
RK 39  
RK 49  
0.81  
0.81  
0.81  
0.81  
0.81  
0.81  
0.81  
0.81  
0.81  
0.7  
0.7  
1.5  
1.5  
2.0  
3.5  
2.0  
4.0  
4.0  
1
22  
20  
17  
15  
12  
8
φ
φ
Axial( 2.7/ 0.6)  
10  
1
30  
φ
φ
Axial( 2.7/ 0.78)  
40  
2
55  
φ
φ
Axial( 4.0/ 0.78)  
40  
2
55  
φ
φ
90  
Axial( 4.0/ 0.98)  
50  
3
70  
φ
φ
Axial( 6.5/ 1.4)  
60  
5
125  
70  
4.0 TO-220F(Center-tap) FMB-29  
4.0 TO-220F2Pin FMB-G19L  
8.0 TO-220F(Center-tap) FMB-29L  
50  
3
4
60  
5
125  
125  
4
60  
5
4
Low VF “A Series”  
Surface-Mount  
IFSM  
(A)  
IR  
IR(H)  
VF  
(V)  
max  
Rth(j-l)  
VRM  
(V)  
IF (AV)  
(A)  
Tj  
Tstg  
IF  
(A)  
(mA)  
VR=VRM  
max  
(mA)  
VR=VRM  
max  
Ta  
Mass  
(g)  
Package  
Part Number  
Rth(j-c)  
°
°
°
( C)  
( C)  
( C)  
50Hz  
Single Half Sine Wave  
°
(
/W)  
C
1.0 Surface-Mount (SJP) SJPA-D3  
2.0 Surface-Mount (SJP) SJPA-H3*  
3.0 Surface-Mount (SJP) SJPA-L3  
30  
40  
50  
-40 to +125  
0.36  
1.0  
2.0  
3.0  
1.5  
3.0  
4.5  
70  
140  
210  
100  
100  
100  
20  
0.072  
0.072  
0.072  
30  
-40 to +125  
-40 to +125  
0.36  
0.36  
20  
20  
*Under development  
Thru-Hole  
IFSM  
(A)  
50Hz  
IR  
(mA)  
VR=VRM  
max  
IR(H)  
(mA)  
VR=VRM  
max  
Package  
Axial  
(Body Diameter/Lead Diameter)  
VF  
(V)  
max  
Rth(j-l)  
Mass  
VRM  
(V)  
IF (AV)  
(A)  
Tj  
Tstg  
IF  
(A)  
Ta  
Part Number  
RA 13  
Rth(j-c)  
(g)  
°
°
°
( C)  
( C)  
( C)  
°
(
/W)  
C
Single Half Sine Wave  
30  
2.0  
Axial(  
φ4.0/  
φ
0.78)  
40  
-40 to +125  
0.36  
2.0  
3.0  
140  
100  
15  
0.45  
Diodes  
199  

与FMB-26LS相关器件

型号 品牌 获取价格 描述 数据表
FMB-26R SANKEN

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, Silicon, TO-220AB, TO-220F, 3 PIN
FMB-26S SANKEN

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, Silicon, TO-220AB, TO-220F, 3 PIN
FMB28.63636MCCF18010 FOX

获取价格

Quartz Crystal
FMB-29 SANKEN

获取价格

Schottky Barrier Diodes 90V
FMB2907A FAIRCHILD

获取价格

PNP Multi-Chip General Purpose Amplifier
FMB2907A ONSEMI

获取价格

PNP 多芯片通用放大器
FMB2907A_NL FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMB2907AD84Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMB2907AL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMB2907AT/R_NL FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FR