Datasheet > FM5822V-A

FM5822V-A

更新时间： 2024-09-28 22:48:59

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	70K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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FM5822V-A 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM5822V-A

Silicon epitaxial planer type

Features

SMA

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.185(4.8)

0.177(4.4)

0.012(0.3) Typ.

For surface mounted applications.

0.110(2.8)

0.094(2.4)

Exceeds environmental standards of MIL-S-19500 /

228

0.165(4.2)

0.150(3.8)

Low leakage current.

0.067(1.7)

0.060(1.5)

0.040(1.0) Typ.

0.040 (1.0) Typ.

Dimensions in inches and (millimeters)

Mechanical data

Case : Molded plastic, JEDECDO-214AC

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

MARKING CODE : SK34

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.0015 ounce, 0.05 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

Repetitive peak reverse voltage

RMS voltage

CONDITIONS

Symbol

V_RRM

V_RMS

V_R

MIN.

TYP.

MAX.

UNIT

Continuous reverse voltage

Forward rectified current

Ambient temperature = 80 C

I_O

3.0

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Operating temperature

Storage temperature

f=1MHz and applied 4vDC reverse voltage

250

T_J

-50

+125

+150

T_STG

ELECTRICAL CHARACTERISTICS (AT T_A=25 C unless otherwise noted)

PARAMETER

Forward voltage

CONDITIONS

Symbol

V_F

MIN.

TYP.

MAX.

0.40

0.5

UNIT

IF = 1.0 AMPERE DC

V_R= Peak reverse voltage T_A= 25 C

Reverse current

I_R

V_R= Peak reverse voltage T_A= 100 C

中文翻译

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