FM5821-AN PDF预览

FM5821-AN

更新时间: 2025-07-20 22:40:55
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管
页数 文件大小 规格书
2页 73K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM5821-AN 数据手册

 浏览型号FM5821-AN的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM5820-AN THRU FM5822-AN  
Silicon epitaxial planer type  
SMA-N  
Features  
0.185(4.8)  
0.173(4.4)  
0.012(0.3) Typ.  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-OUtilizing Flame  
Retardant EpoxyMolding Compound.  
0.110(2.8)  
0.094(2.4)  
For surface mounted applications.  
0.165(4.2)  
0.150(3.8)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.067(1.7)  
0.060(1.5)  
Low leakage current.  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
0.067(1.7)  
0.053(1.3)  
Mechanical data  
Dimensions in inches and (millimeters)  
Case : Molded plastic, JEDEC DO-214AC  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : 0.0015 ounce, 0.15 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
3.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
80  
A
o
VR = VRRM TA = 25 C  
2.0  
20  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJA  
CJ  
80  
C / w  
pF  
Diode junction capacitance  
Operating temperature  
f=1MHz and applied 4vDC reverse voltage  
250  
o
TSTG  
-55  
+150  
C
Storage  
*1  
*2  
*3  
*4  
MARKING  
VRRM  
VRMS  
VR  
VF  
temperature  
SYMBOLS  
CODE  
o
( C)  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
(V)  
(V)  
(V)  
(V)  
FM5820-AN  
FM5821-AN  
FM5822-AN  
SK32  
SK33  
SK34  
20  
30  
40  
14  
21  
28  
20  
30  
40  
0.475  
0.500  
0.525  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
-55 to +125  

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