FM25C160B

更新时间： 2024-09-26 11:57:27

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
13页	171K
描述
16Kb Serial 5V F-RAM Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FM25C160B 数据手册

Preliminary

FM25C160B

16Kb Serial 5V F-RAM Memory

Features

Sophisticated Write Protection Scheme

16K bit Ferroelectric Nonvolatile RAM

•

Hardware Protection

Software Protection

•

Organized as 2,048 x 8 bits

High Endurance 1 Trillion (10¹²) Read/Writes

38 year Data Retention

Low Power Consumption

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

•

250 µA Active Current (1 MHz)

4 µA (typ.) Standby Current

Very Fast Serial Peripheral Interface - SPI

Industry Standard Configuration

•

Up to 20 MHz maximum Bus Frequency

Direct hardware replacement for EEPROM

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

•

Industrial Temperature -40° C to +85° C

8-pin “Green”/RoHS SOIC (-G)

Description

Pin Configuration

The FM25C160B is a 16-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides reliable data retention for 38 years while

eliminating the complexities, overhead, and system

level reliability problems caused by EEPROM and

other nonvolatile memories.

VDD

HOLD

SCK

VSS

The FM25C160B performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array immediately after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. The FM25C160B is capable of

supporting up to 10¹²read/write cycles, or a million

times more write cycles than EEPROM.

Pin Name

/CS

/WP

/HOLD

SCK

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

These capabilities make the FM25C160B ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection,

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss.

Ground

Ordering Information

The FM25C160B provides substantial benefits to

users of serial EEPROM, in a hardware drop-in

replacement. The FM25C160B uses the high-speed

SPI bus, which enhances the high-speed write

capability of F-RAM technology. The specifications

are guaranteed over an industrial temperature range

of -40°C to +85°C.

FM25C160B-G

“Green” 8-pin SOIC

FM25C160B-GTR

“Green” 8-pin SOIC,

Tape & Reel

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-F-RAM, (719) 481-7000

www.ramtron.com

Rev. 1.2

Mar. 2011

Page 1 of 13

12 3 4 5 6 7...13

中文翻译

下载PDF

与FM25C160B相关器件

型号	品牌	获取价格	描述	数据表
FM25C160B_13	CYPRESS	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160B-G	CYPRESS	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160B-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM25C160B-GA	CYPRESS	获取价格	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM25C160B-GTR	CYPRESS	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160B-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM25C160C	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160C-G	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160C-GTR	RAMTRON	获取价格	16Kb Serial 5V F-RAM Memory
FM25C160-G	RAMTRON	获取价格	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

与FM25C160B相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

17

产品中心

服务支持

精选活动

关于我们

帮助中心

FM25C160B

FM25C160B 数据手册

与FM25C160B相关器件

与FM25C160B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FM25C160B

FM25C160B 数据手册

与FM25C160B相关器件

与FM25C160B相关文章

您还可以找

您在本页遇到什么问题？