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FM25640B-G PDF预览

FM25640B-G

更新时间： 2024-09-24 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管PC
页数 文件大小 规格书
13页 213K
描述
64Kb Serial 5V F-RAM Memory

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中文翻译

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FM25640B-G 技术参数

生命周期：Transferred零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.12Is Samacsys：N
JESD-30 代码：R-PDSO-G8长度：4.9 mm
内存密度：65536 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：8功能数量：1
端子数量：8字数：8192 words
字数代码：8000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
座面最大高度：1.75 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

FM25640B-G 数据手册

 浏览型号FM25640B-G的Datasheet PDF文件第2页浏览型号FM25640B-G的Datasheet PDF文件第3页浏览型号FM25640B-G的Datasheet PDF文件第4页浏览型号FM25640B-G的Datasheet PDF文件第5页浏览型号FM25640B-G的Datasheet PDF文件第6页浏览型号FM25640B-G的Datasheet PDF文件第7页 
Preliminary  
FM25640B  
64Kb Serial 5V F-RAM Memory  
Features  
Sophisticated Write Protection Scheme  
64K bit Ferroelectric Nonvolatile RAM  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 8,192 x 8 bits  
High Endurance 1 Trillion (1012) Read/Writes  
38 Year Data Retention  
Low Power Consumption  
NoDelay™ Writes  
Advanced high-reliability ferroelectric process  
•
•
250 µA Active Current (1 MHz)  
4 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configuration  
•
•
•
Up to 20 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
•
•
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC (-G)  
Description  
Pin Configuration  
The FM25640B is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile but operates in other respects as a RAM.  
It provides reliable data retention for 38 years while  
eliminating the complexities, overhead, and system  
level reliability problems caused by EEPROM and  
other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
WP  
4
VSS  
The FM25640B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM25640B is capable of  
supporting up to 1012 read/write cycles, or a million  
times more write cycles than EEPROM.  
Pin Names  
/CS  
Function  
Chip Select  
Hold  
Write Protect  
Serial Clock  
/HOLD  
/WP  
SCK  
SI  
Serial Data Input  
Serial Data Output  
5V  
These capabilities make the FM25640B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
SO  
VDD  
VSS  
Ground  
Ordering Information  
FM25640B-G  
FM25640B-GTR  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
The FM25640B provides substantial benefits to users  
of serial EEPROM, in  
a
hardware drop-in  
replacement. The FM25640B uses the high-speed SPI  
bus, which enhances the high-speed write capability  
of F-RAM technology. The specifications are  
guaranteed over an industrial temperature range of  
-40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-F-RAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.2  
Mar. 2011  
Page 1 of 13  
1234567...13

中文翻译

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FM25640B-G 替代型号

型号 品牌 替代类型 描述 数据表
FM25640B-G CYPRESS

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 		Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
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 		Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM25640B-GTR RAMTRON

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FM25640B-GTR INFINEON

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