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FM24C16B-GTR PDF预览

FM24C16B-GTR

更新时间: 2024-03-03 10:08:56
品牌 Logo 应用领域
英飞凌 - INFINEON 存储
页数 文件大小 规格书
18页 449K
描述
铁电存储器 (F-RAM)

FM24C16B-GTR 数据手册

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FM24C16B  
16-Kbit (2K × 8) Serial (I2C) F-RAM  
16-Kbit (2K  
× 8) Serial (I2C) F-RAM  
Features  
Functional Description  
The FM24C16B is a 16-Kbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 151 years  
while eliminating the complexities, overhead, and system-level  
reliability problems caused by EEPROM and other nonvolatile  
memories.  
16-Kbit ferroelectric random access memory (F-RAM) logically  
organized as 2K × 8  
High-endurance 100 trillion (1014) read/writes  
151-year data retention (See Data Retention and Endurance  
on page 10)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
Unlike EEPROM, the FM24C16B performs write operations at  
bus speed. No write delays are incurred. Data is written to the  
memory array immediately after each byte is successfully  
transferred to the device. The next bus cycle can commence  
without the need for data polling. In addition, the product offers  
substantial write endurance compared with other nonvolatile  
memories. Also, F-RAM exhibits much lower power during writes  
than EEPROM since write operations do not require an internally  
elevated power supply voltage for write circuits. The FM24C16B  
is capable of supporting 1014 read/write cycles, or 100 million  
times more write cycles than EEPROM.  
Fast 2-wire Serial interface (I2C)  
Up to 1-MHz frequency  
Direct hardware replacement for serial (I2C) EEPROM  
Supports legacy timings for 100 kHz and 400 kHz  
Low power consumption  
100 A active current at 100 kHz  
4 A (typ) standby current  
Voltage operation: VDD = 4.5 V to 5.5 V  
Industrial temperature: –40 C to +85 C  
These capabilities make the FM24C16B ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data logging, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of EEPROM can cause data loss. The  
combination of features allows more frequent data writing with  
less overhead for the system.  
8-pin small outline integrated circuit (SOIC) package  
Restriction of hazardous substances (RoHS) compliant  
The FM24C16B provides substantial benefits to users of serial  
(I2C) EEPROM as a hardware drop-in replacement. The device  
specifications are guaranteed over an industrial temperature  
range of –40 C to +85 C.  
For a complete list of related documentation, click here.  
Logic Block Diagram  
2 K x 8  
F-RAM Array  
Address  
Counter  
Latch  
11  
8
Serial to Parallel  
Converter  
SDA  
Data Latch  
8
SCL  
Control Logic  
WP  
Cypress Semiconductor Corporation  
Document Number: 001-84450 Rev. *M  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised December 5, 2018  

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