Datasheet > FM24C04B-GTR

FM24C04B-GTR

更新时间： 2024-12-01 15:18:47

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
18页	458K
描述
铁电存储器 (F-RAM)

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FM24C04B-GTR 数据手册

FM24C04B

4-Kbit (512 × 8) Serial (I²C) F-RAM

4-Kbit (512

× 8) Serial (I²C) F-RAM

Features

Functional Description

The FM24C04B is a 4-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 4-Kbit ferroelectric random access memory (F-RAM) logically

organized as 512 × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See Data Retention and Endurance

on page 10)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24C04B performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The FM24C04B

is capable of supporting 10¹⁴read/write cycles, or 100 million

times more write cycles than EEPROM.

■ Fast 2-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A active current at 100 kHz

❐ 4 A (typ) standby current

■ Voltage operation: V_DD= 4.5 V to 5.5 V

■ AEC-Q100 grade 3 qualified

These capabilities make the FM24C04B ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The FM24C04B provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are AEC-Q100 qualified and guaranteed over an

industrial temperature range of –40 C to +85 C.

For a complete list of related documentation, click here.

Logic Block Diagram

512 x 8

F-RAM Array

Address

Counter

Latch

Serial to Parallel

SDA

Data Latch

Converter

SCL

Control Logic

A2-A1

Cypress Semiconductor Corporation

Document Number: 001-84446 Rev. *M

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised December 5, 2018

12 3 4 5 6 7...18

中文翻译

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与FM24C04B-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24C04C	RAMTRON	获取价格	4Kb Serial 5V F-RAM Memory
FM24C04-C	ETC	获取价格	NVRAM (Ferroelectric Based)
FM24C04C-G	RAMTRON	获取价格	4Kb Serial 5V F-RAM Memory
FM24C04C-GTR	RAMTRON	获取价格	4Kb Serial 5V F-RAM Memory
FM24C04D	FM	获取价格	EEPROM
FM24C04-P	ETC	获取价格	IC 4K SERIAL FRAM
FM24C04PS	RAMTRON	获取价格	Non-Volatile SRAM, 512X8, 3500ns, CMOS, PDIP8
FM24C04-PS	ETC	获取价格	NVRAM (Ferroelectric Based)
FM24C04-PT	ETC	获取价格	NVRAM (Ferroelectric Based)
FM24C04S	RAMTRON	获取价格	Memory Circuit, 512KX8, CMOS, PDSO8, MS-012AA, SOIC-8

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