Datasheet > FM230-N

FM230-N

更新时间： 2024-09-29 22:30:47

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	75K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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FM230-N 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM220-N THRU FM2100-N

Silicon epitaxial planer type

SMA-N

Features

0.185(4.8)

0.173(4.4)

0.012(0.3) Typ.

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.110(2.8)

0.094(2.4)

For surface mounted applications.

0.165(4.2)

0.150(3.8)

Exceeds environmental standards of MIL-S-19500 /

228

0.067(1.7)

0.060(1.5)

Low leakage current.

0.040(1.0) Typ.

0.040 (1.0) Typ.

0.067(1.7)

0.053(1.3)

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AC

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.0017 ounce, 0.057 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

2.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

160

T_STG

-55

+150

Operating

MARKING

V_RRM

V_RMS

V_R

V_F

temperature

SYMBOLS

CODE

( C)

(V)

FM220-N

FM230-N

FM240-N

FM250-N

FM260-N

FM280-N

FM2100-N

SK22

SK23

SK24

SK25

SK26

SK28

S210

100

0.50

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.70

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.85

100

中文翻译

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