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FM22LD16_13

更新时间： 2024-11-20 12:06:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储
页数 文件大小 规格书
15页 424K
描述
4Mbit F-RAM Memory

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中文翻译

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FM22LD16_13 数据手册

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FM22LD16  
4Mbit F-RAM Memory  
Features  
Superior to Battery-backed SRAM Modules  
4Mbit Ferroelectric Nonvolatile RAM  
No Battery Concerns  
Monolithic Reliability  
True Surface Mount Solution, No Rework Steps  
Superior for Moisture, Shock, and Vibration  
Organized as 256Kx16  
Configurable as 512Kx8 Using /UB, /LB  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation to 40MHz  
Advanced High-Reliability Ferroelectric Process  
Low Power Operation  
2.7V – 3.6V Power Supply  
Low Standby Current (90µA typ.)  
Low Active Current (8 mA typ.)  
SRAM Compatible  
JEDEC 256Kx16 SRAM Pinout  
55 ns Access Time, 110 ns Cycle Time  
Industry Standard Configuration  
Industrial Temperature -40C to +85C  
48-ball “Green”/RoHS FBGA package  
Pin compatible with FM21LD16 (2Mb) and  
FM23MLD16 (8Mb)  
Advanced Features  
Software Programmable Block Write Protect  
The device is available in a 48-ball FBGA package.  
Device specifications are guaranteed over industrial  
temperature range –40°C to +85°C.  
Description  
The FM22LD16 is a 256Kx16 nonvolatile memory  
that reads and writes like a standard SRAM. A  
ferroelectric random access memory or F-RAM is  
nonvolatile, which means that data is retained after  
power is removed. It provides data retention for over  
10 years while eliminating the reliability concerns,  
functional disadvantages, and system design  
complexities of battery-backed SRAM (BBSRAM).  
Fast write timing and high write endurance make the  
F-RAM superior to other types of memory.  
Pin Configuration  
1
2
3
4
5
6
A
B
C
/LB  
/OE  
/UB  
A0  
A3  
A5  
A1  
A4  
A6  
A2  
/CE  
DQ1  
NC  
DQ8  
DQ9  
DQ0  
DQ2  
DQ10  
In-system operation of the FM22LD16 is very similar  
to other RAM devices and can be used as a drop-in  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by  
changing the address. The F-RAM memory is  
nonvolatile due to its unique ferroelectric memory  
process. These features make the FM22LD16 ideal  
for nonvolatile memory applications requiring  
frequent or rapid writes in the form of an SRAM.  
D
E
F
VSS  
VDD  
DQ11  
DQ12  
A17  
NC  
A7  
DQ3  
DQ4  
DQ5  
VDD  
VSS  
DQ6  
A16  
A15  
DQ14 DQ13  
A14  
G
H
DQ15  
NC  
NC  
A8  
A12  
A9  
A13  
A10  
/WE  
A11  
DQ7  
NC  
The FM22LD16 includes a low voltage monitor that  
blocks access to the memory array when VDD drops  
below VDD min. The memory is protected against an  
inadvertent access and data corruption under this  
condition. The device also features software-  
controlled write protection. The memory array is  
divided into 8 uniform blocks, each of which can be  
individually write protected.  
Top View (Ball Down)  
Ordering Information  
FM22LD16-55-BG  
55 ns access, 48-ball  
“Green”/RoHS FBGA  
FM22LD16-55-BGTR 55 ns access, 48-ball  
“Green”/RoHS FBGA,  
Tape & Reel  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
Document Number: 001-86190 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised February 25, 2013  
1234567...15

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