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FM22LD16_09

更新时间： 2024-11-20 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
14页 215K
描述
4Mbit F-RAM Memory

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中文翻译

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FM22LD16_09 数据手册

 浏览型号FM22LD16_09的Datasheet PDF文件第2页浏览型号FM22LD16_09的Datasheet PDF文件第3页浏览型号FM22LD16_09的Datasheet PDF文件第4页浏览型号FM22LD16_09的Datasheet PDF文件第5页浏览型号FM22LD16_09的Datasheet PDF文件第6页浏览型号FM22LD16_09的Datasheet PDF文件第7页 
Pre-Production  
FM22LD16  
4Mbit F-RAM Memory  
Features  
Superior to Battery-backed SRAM Modules  
4Mbit Ferroelectric Nonvolatile RAM  
•
•
•
•
No Battery Concerns  
Monolithic Reliability  
True Surface Mount Solution, No Rework Steps  
Superior for Moisture, Shock, and Vibration  
•
•
•
•
•
•
Organized as 256Kx16  
Configurable as 512Kx8 Using /UB, /LB  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation to 40MHz  
Advanced High-Reliability Ferroelectric Process  
Low Power Operation  
•
•
•
2.7V – 3.6V Power Supply  
Low Standby Current (90µA typ.)  
Low Active Current (8 mA typ.)  
SRAM Compatible  
•
•
JEDEC 256Kx16 SRAM Pinout  
55 ns Access Time, 110 ns Cycle Time  
Industry Standard Configuration  
•
•
•
Industrial Temperature -40° C to +85° C  
48-ball “Green”/RoHS FBGA package  
Pin compatible with FM21LD16 (2Mb) and  
FM23MLD16 (8Mb)  
Advanced Features  
Software Programmable Block Write Protect  
•
The device is available in a 48-ball FBGA package.  
Device specifications are guaranteed over industrial  
temperature range –40°C to +85°C.  
Description  
The FM22LD16 is a 256Kx16 nonvolatile memory  
that reads and writes like a standard SRAM. A  
ferroelectric random access memory or F-RAM is  
nonvolatile, which means that data is retained after  
power is removed. It provides data retention for over  
10 years while eliminating the reliability concerns,  
functional disadvantages, and system design  
complexities of battery-backed SRAM (BBSRAM).  
Fast write timing and high write endurance make the  
F-RAM superior to other types of memory.  
Pin Configuration  
1
2
3
4
5
6
A
B
C
/LB  
/OE  
/UB  
A0  
A3  
A5  
A1  
A4  
A6  
A2  
/CE  
DQ1  
NC  
DQ8  
DQ9  
DQ0  
DQ2  
DQ10  
In-system operation of the FM22LD16 is very similar  
to other RAM devices and can be used as a drop-in  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by  
changing the address. The F-RAM memory is  
nonvolatile due to its unique ferroelectric memory  
process. These features make the FM22LD16 ideal  
for nonvolatile memory applications requiring  
frequent or rapid writes in the form of an SRAM.  
D
E
F
VSS  
VDD  
DQ11  
DQ12  
A17  
NC  
A7  
DQ3  
DQ4  
DQ5  
VDD  
VSS  
DQ6  
A16  
A15  
DQ14 DQ13  
A14  
G
H
DQ15  
NC  
NC  
A8  
A12  
A9  
A13  
A10  
/WE  
A11  
DQ7  
NC  
The FM22LD16 includes a low voltage monitor that  
blocks access to the memory array when VDD drops  
below VDD min. The memory is protected against an  
inadvertent access and data corruption under this  
condition. The device also features software-  
controlled write protection. The memory array is  
divided into 8 uniform blocks, each of which can be  
individually write protected.  
Top View (Ball Down)  
Ordering Information  
FM22LD16-55-BG  
55 ns access, 48-ball  
“Green”/RoHS FBGA  
FM22LD16-55-BGTR 55 ns access, 48-ball  
“Green”/RoHS FBGA,  
Tape & Reel  
This is a product in the pre-production phase of development. Device  
characterization is complete and Ramtron does not expect to change the  
specifications. Ramtron will issue a Product Change Notice if any  
specification changes are made.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 2.0  
Dec. 2009  
Page 1 of 14  
1234567...14

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