5秒后页面跳转
捷配首页

Datasheet > FM22LD16-55-BG
FM22LD16-55-BG PDF预览

FM22LD16-55-BG

更新时间： 2024-11-20 06:59:43
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器
页数 文件大小 规格书
14页 211K
描述
4Mbit F-RAM Memory

阅读下载

中文翻译

获取价格

FM22LD16-55-BG 技术参数

生命周期：Transferred零件包装代码：BGA
包装说明：TFBGA,针数：48
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.65JESD-30 代码：R-PBGA-B48
长度：8 mm内存密度：4194304 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：48
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：6 mm
Base Number Matches：1

FM22LD16-55-BG 数据手册

 浏览型号FM22LD16-55-BG的Datasheet PDF文件第2页浏览型号FM22LD16-55-BG的Datasheet PDF文件第3页浏览型号FM22LD16-55-BG的Datasheet PDF文件第4页浏览型号FM22LD16-55-BG的Datasheet PDF文件第5页浏览型号FM22LD16-55-BG的Datasheet PDF文件第6页浏览型号FM22LD16-55-BG的Datasheet PDF文件第7页 
Preliminary  
FM22LD16  
4Mbit F-RAM Memory  
Features  
Superior to Battery-backed SRAM Modules  
4Mbit Ferroelectric Nonvolatile RAM  
•
•
•
•
No Battery Concerns  
Monolithic Reliability  
True Surface Mount Solution, No Rework Steps  
Superior for Moisture, Shock, and Vibration  
•
•
•
•
•
•
Organized as 256Kx16  
Configurable as 512Kx8 Using /UB, /LB  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation to 40MHz  
Advanced High-Reliability Ferroelectric Process  
Low Power Operation  
•
•
•
2.7V – 3.6V Power Supply  
Low Standby Current (90µA typ.)  
Low Active Current (8 mA typ.)  
SRAM Compatible  
•
•
JEDEC 256Kx16 SRAM Pinout  
55 ns Access Time, 110 ns Cycle Time  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
48-ball “Green”/RoHS FBGA package  
Advanced Features  
•
Low VDD Monitor Protects Memory against  
Inadvertent Writes  
•
Software Programmable Block Write Protect  
Description  
The device is available in a 48-ball FBGA package.  
Device specifications are guaranteed over industrial  
temperature range –40°C to +85°C.  
The FM22LD16 is a 256Kx16 nonvolatile memory  
that reads and writes like a standard SRAM. A  
ferroelectric random access memory or F-RAM is  
nonvolatile, which means that data is retained after  
power is removed. It provides data retention for over  
10 years while eliminating the reliability concerns,  
functional disadvantages, and system design  
complexities of battery-backed SRAM (BBSRAM).  
Fast write timing and high write endurance make the  
F-RAM superior to other types of memory.  
Pin Configuration  
1
2
3
4
5
6
A
B
C
/LB  
/OE  
/UB  
A0  
A3  
A5  
A1  
A4  
A6  
A2  
/CE  
DQ1  
NC  
DQ8  
DQ9  
DQ0  
DQ2  
In-system operation of the FM22LD16 is very similar  
to other RAM devices and can be used as a drop-in  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by  
changing the address. The F-RAM memory is  
nonvolatile due to its unique ferroelectric memory  
process. These features make the FM22LD16 ideal  
for nonvolatile memory applications requiring  
frequent or rapid writes in the form of an SRAM.  
DQ10  
D
E
F
VSS  
VDD  
DQ11  
DQ12  
A17  
NC  
A7  
DQ3  
DQ4  
DQ5  
VDD  
VSS  
DQ6  
A16  
A15  
DQ14 DQ13  
A14  
G
H
DQ15  
NC  
NC  
A8  
A12  
A9  
A13  
A10  
/WE  
A11  
DQ7  
NC  
The FM22LD16 includes a low voltage monitor that  
blocks access to the memory array when VDD drops  
below a critical threshold. The memory is protected  
against an inadvertent access and data corruption  
under this condition. The device also features  
software-controlled write protection. The memory  
array is divided into 8 uniform blocks, each of which  
can be individually write protected.  
Top View (Ball Down)  
Ordering Information  
FM22LD16-55-BG  
55 ns access, 48-ball  
“Green”/RoHS FBGA  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.0  
Oct. 2008  
Page 1 of 14  
1234567...14

中文翻译

下载PDF

与FM22LD16-55-BG相关器件

型号 品牌 获取价格 描述 数据表
FM22LD16-55-BGTR CYPRESS

获取价格

 		4Mbit F-RAM Memory
FM22LD16-55-BGTR INFINEON

获取价格

 		铁电存储器 (F-RAM)
FM230 FORMOSA

获取价格

 		Silicon epitaxial planer type
FM230 RECTRON

获取价格

 		SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere
FM230A RECTRON

获取价格

 		SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
FM230A-T RECTRON

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, DO-214AC, SMA, 2 P
FM230AV-T RECTRON

获取价格

 		Rectifier Diode,
FM230AV-W RECTRON

获取价格

 		Rectifier Diode,
FM230A-W RECTRON

获取价格

 		暂无描述
FM230C RECTRON

获取价格

 		SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere

与FM22LD16-55-BG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证